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Chao Yang 0033

dblp:00/5867-33 · DBLP profile ↗
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3ranked-venue papers
1as first author
0since 2021 · last 2019
0000-0003-0781-7227ORCID · verified

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 3 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
3 papers
Integrated circuit design · 100%

Topics — the 5 heaviest of 6, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
power semiconductor devices		 0.622018
High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels · Sci. China Inf. Sci. 2018
Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer · Sci. China Inf. Sci. 2016
Integrated circuit design › semiconductor devices
semiconductor device design		 0.412019
Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers · Sci. China Inf. Sci. 2019
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor		 0.312018
High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels · Sci. China Inf. Sci. 2018
Integrated circuit design › semiconductor devices › GaN HEMT
AlGaN/GaN HEMT		 0.212016
Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer · Sci. China Inf. Sci. 2016
Integrated circuit design › semiconductor devices › GaN HEMT
gallium nitride device		 0.112019
Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers · Sci. China Inf. Sci. 2019

Methods — techniques the papers use, named apart from their topics

device simulation · 0.4hole-gas enhancement · 0.3
YearPublicationVenuePosition
2019 Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers
Fu Peng, Chao Yang 0033, Siyu Deng, Dongya Ouyang, Bo Zhang 0027, Xiaorong Luo
 Sci. China Inf. Sci.2
2018 High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels
Chao Yang 0033, Xiaorong Luo, Siyu Deng, Fu Peng, Bo Zhang 0027
 Sci. China Inf. Sci.1
2016 Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer
Jiayun Xiong, Chao Yang 0033, Bo Zhang 0027, Xiaorong Luo
 Sci. China Inf. Sci.2