VLDB 2026 Research / reviewers in the wild / expert

Ling Yang 0003

dblp:01/24-3 · DBLP profile ↗
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9ranked-venue papers
0as first author
9since 2021 · last 2026
0000-0001-7284-8180ORCID · conflict

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 9 · 9 since 2021
YearPublicationVenuePosition
2026 High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap
Hao Lu 0012, Ling Yang 0003, Bin Hou, Xiaohua Ma 0001, Yue Hao 0001
 Sci. China Inf. Sci.3
2026 High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process
Hao Lu 0012, Xiaohua Ma 0001, Longge Deng, Ling Yang 0003, Bin Hou, Yue Hao 0001
 Sci. China Inf. Sci.4
2026 High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs
Ling Yang 0003, Chunzhou Shi, Bin Hou, Hao Lu 0012, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001
 Sci. China Inf. Sci.2
2025 Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT
Mao Jia, Bin Hou, Ling Yang 0003, Hao Lu 0012, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Xiaohua Ma 0001, Yue Hao 0001
 Sci. China Inf. Sci.3
2024 High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation
Qingyuan Chang, Bin Hou, Ling Yang 0003, Hao Lu 0012, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Youjun Zhu, Xiaohua Ma 0001, Yue Hao 0001
 Sci. China Inf. Sci.3
2024 Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure
Chunzhou Shi, Ling Yang 0003, Hao Lu 0012, Bin Hou, Xuerui Niu, Wenliang Liu 0003, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001
 Sci. China Inf. Sci.2
2024 Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias
Qing Zhu 0013, Zhenni Wang, Yuxiang Wei 0006, Ling Yang 0003, Xiaoli Lu, Jiejie Zhu, Peng Zhong, Yimin Lei, Xiaohua Ma 0001
 Sci. China Inf. Sci.4
2022 Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method
Xiaohua Ma 0001, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Qing Zhu 0013, Ling Yang 0003, Yue Hao 0001
 Sci. China Inf. Sci.9
2021 Recent progress of integrated circuits and optoelectronic chips
Yue Hao 0001, Genquan Han, Jincheng Zhang 0001, Xiaohua Ma 0001, Zhangming Zhu, Yanan Han, Ling Yang 0003, Jiangyi Shi, Wei Zhang 0343, Biao Pan, Yangqi Huang, Qi Liu 0010, Yimao Cai, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao 0006, Guoping Guo, Yonghua Chen, Xiangfei Chen, Chunlai Xue, Lixia Zhao, Xihua Zou, Lianshan Yan
 Sci. China Inf. Sci.12