Nonvolatile memory (NVM)-based computing-in-memory (CiM) has shown promising prospects in deep neural network (DNN) inference at the edge thanks to its nonvolatility and high density. Moreover, most NVMs support multi-level cell (MLC) storage, which can further boost energy efficiency and storage density. However, MLC NVM-based CiMs suffer from degraded accuracy due to device nonidealities, including large variations, nonlinear current distribution, and state drifts. Although prior works have explored various mitigation measures, such as hybrid SLC/MLC, write-and-verify, and local recovery units, the substantial costs from software support, energy, latency, and area still limit the performance. Therefore, the tradeoff between inference accuracy, storage density and compute density has become a vital challenge in NVM-based CiMs.

Ferroelectric Field Effect Transistors (FeFETs) have spurred increasing interest in both memories and computing applications, thanks to their CMOS compatibility, low-power operation, and high scalability. However, new security threats to the FeFET-based memories also arise. A major threat is the power analysis side-channel attack (P-SCA), which exploits the power traces of the memory access to obtain data information. There have been several effective efforts on resistive nonvolatile memories (NVMs), but they fail to meet the requirements for secure FeFET-based memories due to the different capacitive FeFETs load. Directly applying these existing countermeasures to the P-SCA protection for FeFETs induces huge challenges, especially for the balance between power side-channel resistance and corresponding overheads. To address this issue, we leverage the unique features of FeFETs and propose ProtFe , namely the protection methods for FeFET-based memories, including the pipelined multi-step write strategy ( PiMWrite ) and the split array design ( SpA ). PiMWrite is proposed for general FeFET-based memories, and inserts specially designed intermediate states to mitigate information leakage with pipelined steps to reduce overheads. SpA is proposed for custom FeFET-based memories, and simultaneously writes two split portions of the array with shared minimized peripherals to go beyond the balance between security and overheads. Simulation results show that PiMWrite expands the search space of a single power trace to 21× and involves nearly zero hardware penalties. SpA presents 33× search space improvement with negligible latency, 0.6% area, and only 7.1% energy overhead. ProtFe achieves improved balance between security and overheads, compared with the state-of-the-art works.

Logic camouflage is a widely adopted technique that mitigates the threat of intellectual property (IP) piracy and overproduction in the integrated circuit (IC) supply chain. Camouflaged logic achieves functional obfuscation through physical-level ambiguity and post-manufacturing programmability. However, discussions on programmability are confined to the level of logic cells/gates, limiting the broader-scale application of logic camouflage. In this work, we propose a novel module-level configuration methodology for programmable camouflaged logic that can be implemented without additional hardware ports and with negligible resources. We prove theoretically that the configuration of the programmable camouflaged logic cells can be achieved through the inputs and netlist of the original module. Further, we propose a novel lightweight ferroelectric FET (FeFET)-based reconfigurable logic gate (rGate) family and apply it to the proposed methodology. With the flexible replacement and the proposed configuration-aware conversion algorithm, this work is characterized by the input-only programming scheme as well as the combination of high output error rate and point-function-like defense. Evaluations show an average of >95% of the alternative rGate location for camouflage, which is sufficient for the security-aware design. We illustrate the exponential complexity in function state traversal and the enhanced defense capability of locked blackbox against Boolean Satisfiability (SAT) attacks compared with key-based methods. We also preserve an evident output Hamming distance and introduce negligible hardware overheads in both gate-level and module-level evaluations under typical benchmarks.

Multi-level cell (MLC) NVM-based CiM has become a promising candidate in computing-in-memory (CiM) designs because of its non-volatility, high cell density, and improving compatibility with the CMOS process. However, most MLC CiM faces the challenges of non-ideal device limitations, including the low on/off ratio, large device-to-device variations, and read disturbances, which limit the computing accuracy, reliability, and throughput performance. This work proposes Victor, a variation-resilient approach using cell-clustered charge-domain computing for high-density and high-throughput MLC CiM. A cell-clustered-computing with local recovery unit (LRU) design methodology is proposed to improve matrix-vector-multiplication (MVM) reliability and throughput. To showcase the capability of Victor, 2b-4b MLC Resistive RAM (RRAM) is taken as an example for design and evaluation. Results show that Victor reaches 3.56x energy efficiency, 4x variation tolerance compared with the prior ratio-based MLC CiM. In addition, the throughput is improved by 3.1x with less than 1% DNN accuracy loss. Moreover, a dynamic boundary adaption approach is proposed to restore the accuracy loss of state drifting, which in return reduces the energy and latency overhead by 100x and 1.25x, respectively, compared with the conventional write-and-verify approach.

Genome sequence analysis is a powerful tool in medical and scientific research. Considering the inevitable sequencing errors and genetic variations, approximate string matching (ASM) has been adopted in practice for genome sequencing. However, with exponentially increasing bio-data, ASM hardware acceleration is facing severe challenges in improving the throughput and energy efficiency with the accuracy constraint.This paper presents ASMCap, an ASM acceleration approach for genome sequence analysis with hardware-algorithm co-optimization. At the circuit level, ASMCap adopts charge-domain computing based on the capacitive multi-level content addressable memories (ML-CAMs), and outperforms the state-of-the-art ML-CAM-based ASM accelerators EDAM with higher accuracy and energy efficiency. ASMCap also has misjudgment correction capability with two proposed hardware-friendly strategies, namely the Hamming-Distance Aid Correction (HDAC) for the substitution-dominant edits and the Threshold-Aware Sequence Rotation (TASR) for the consecutive indels. Evaluation results show that ASMCap can achieve an average of 1.2x (from 74.7% to 87.6%) and up to 1.8x (from 46.3% to 81.2%) higher F1score (the key metric of accuracy), 1.4x speedup, and 10.8x energy efficiency improvement compared with EDAM. Compared with the other ASM accelerators, including ResMA based on the comparison matrix, and SaVI based on the seeding strategy, ASMCap achieves an average improvement of 174x and 61x speedup, and 8.7e3x and 943x higher energy efficiency, respectively.

The concept of multi-level cell (MLC) enabled by emerging memory device technologies has introduced new opportunities for memory density improvement, including in the cache scenarios with some high-endurance technologies. However, the access latency of different bits within an MLC memory cell is inherently nonuniform, which raises challenges in utilizing the MLC technology for low-latency cache. To exploit the access performance of the MLC cache, the key is identifying the hot data blocks and mapping them to fast MLC bits. Prior works perform the hot/cold data management based on block-wise access patterns with considerable hardware overheads. Inspired by the memory hierarchy, this work proposes a new concept of in-cell hierarchical victim cache as embedded memory and systematically presents the cache architecture, operating mechanism, design space exploration, optimizations, and evaluations. By utilizing the slow bits as the victim buffer, lower hit latency with low implementation overheads is achieved. Based on the in-cell victim cache, two optimization techniques, namely selective victim retrieval, and victim-bypassing write (VBW) are proposed, to further improve performance and prolong cache endurance, respectively. Evaluation results show that the MLC victim cache significantly improves the average system performance by 20.2% over conventional MLC cache and achieves 98% performance of the upper bound implemented with 2x memory cells SLC. The proposed VBW also reduces energy consumption by 21% and improves lifetime by over 80%, showing a new promising dimension for future MLC cache design.

Bitwise logic-in-memory (BLiM) is a promising approach to efficient computing in data-intensive applications by reducing data movement between memory and processing units. However, existing BLiM techniques have challenges towards higher energy efficiency and speed: (i) DC power in computing and result sensing is significant in most existing RRAM and MRAM based BLiM solutions; (ii) before the computation result could be stored back to the same memory array, existing BLiM has to sense the result first, at the cost of extra power and latency due to the sense amplifiers (SAs). Targeting at higher energy efficiency and speed, this work proposes a new BLiM approach in 2-transistor/ cell (2T/C) and 3T/C topologies based on ferroelectric field-effect transistors (FeFETs), supporting a variety of computing functions. For the first time, this new approach supports SA-free direct write-back, and consumes no static power for computing and sensing with proposed fully dynamic computing and sensing schemes. Another highlight is that this work further minimizes the dynamic power by (i) reducing the chance of bitline charging activities and (ii) recycling the bitline charge in sensing multi-operand operations. Compared with prior BLiM methods based on nonvolatile memories, evaluation shows 3.0x–100x latency and 1.3x–200x energy improvement for typical in- memory XOR operation, which further leads to 3.0x–58x and 3.2x–78x savings of latency and energy, respectively, for the application of advanced-encryption standard (AES).

Ferroelectric FETs (FeFETs) have emerged as a promising multi-level/cell (MLC) nonvolatile memory (NVM) candidate for low-power applications. This originates from the advantages of both efficient memory access and intrinsic device-level in-memory computing flexibilities. However, there still exist challenges for FeFET MLC NVM: (i) high power consumption in read operations due to high-gain requirement for sense amplifiers during sensing, and (ii) high latency and energy consumption in write operations with conventional recursive program-and-verify. Targeting at lower power, less latency, and higher density, this work investigates and optimizes the read and write approaches to MLC FeFET NVM design: (i) Adaptive FeFET memory State Mapping (ASM) between the FeFET drain-source current and the digital states to increase the sensing margin; (ii) Adaptive FeFET Gate Biasing (AGB) read methods that adopt the optimized FeFET gate voltage to boost the sensible dynamic range and to store more levels of states per cell; (iii) Adaptive Prediction-based Direct (APD) write methods that minimize the program-andverify activities. Evaluations show significant latency and energy improvement. Furthermore, the number of sensible levels of states per cell is also increased with an enhanced dynamic sensing range and an enhanced sensing margin.