The exploratorium described here consists of hyper-linked tutorials and quizzes on high performance computational concepts and computational modules implemented on different computer systems: desktop workstations, vector and parallel supercomputers. The exploratorium provides a highly interactive environment in which students can experiment with computational modules and visually compare algorithms, numerical techniques, performance and implementation related issues. Such a hands-on simulation and experimentation based learning will enable students to gain a deeper understanding of advanced concepts. The World Wide Web based exploratorium fosters the easy development of instructional material from research software.>

Collocation methods are very useful when one-dimensional Monte Carlo simulations of semiconductor submicron devices require a very accurate solution of Poisson's equation. Potential and electric field may be solved simultaneously with better accuracy than using finite differences. The extension to two dimensions is also outlined. We present the results obtained for Monte Carlo simulation of submicron W/Si and AuGaAs Schottky barrier diodes under forward bias conditions. The accurate solution for the electric field at the ohmic contact boundary allows us to model the injected current and to account for depletion of carriers. Tunnelling effects across the barrier are also included in the simulation.