This work presents a white-box modeling of the electromagnetic (EM) leakage from an integrated circuit (IC) to develop EM side-channel analysis (SCA)-aware design techniques. A new digital library cell layout design technique is proposed to minimize the EM leakage and is evaluated using a high-frequency structure simulator (HFSS)-based framework. Backed by our physics-based understanding of EM radiation, the proposed double-row power grid-based digital cell layout design shows$>5\times $reduction in the EM SCA leakage compared to the traditional digital logic gate layout design. Furthermore, exploiting the magneto-quasistatic (MQS) regime of operation of the EM leakage from the CMOS circuits, the HFSS-based framework is utilized to develop a pre-silicon (Si) EM SCA evaluation technique to assess the vulnerability of cryptographic implementations against such attacks during the design phase itself.

The system-on-chip (SoC) designs for future Internet of Things (IoT) systems, spanning client platforms to cloud datacenters, need to deliver uncompromising and scalable performance with extreme energy efficiency for diverse workloads and applications, while satisfying a wide range of energy budgets, as well as platform cooling and power delivery constraints. Low-latency, burst-mode responsiveness, and scalable high-throughput performance must be delivered on demand for a range of thread-parallel, task-parallel, and data-parallel workloads covering traditional and emerging applications. This article discusses the challenges and opportunities for many-core SoC design in scaled CMOS process operating over a wide voltage-frequency range including near-threshold-voltage (NTV) that can meet the compute demands of the future at scale, flexibly, and efficiently. This article covers: 1) circuit design techniques for NTV cores; 2) mitigation techniques for within-die parameter variations via multivoltage frequency schemes; 3) digital integrated voltage regulators (VRs) for fine-grain and wide-range voltage modulation; and 4) radiation-induced soft error rate (SER) characterization and mitigation techniques to enable reliable operation at NTV. Silicon prototype examples will be used to illustrate the different techniques and highlight future research directions.

This paper analyzes the effect of variations in the parameters of an Integrated Voltage Regulator (IVR) and its impact on the power/performance of a system of IVR driven digital logic circuit. The coupled analysis of IVR and digital logic considering variations in the integrated passives, power train FETs and controller transistors shows, compared to an off-chip VR, variations in IVR induce much larger shifts in the operating frequency of the logic and total system power. Variations in the output filter passives cause most prominent variations in the system power and performance, particularly pronounced at low voltage operation of the core. We also show that the mean performance of the system can be traded-off to reduce the variability by modifying IVR parameters, such as controller zeroes or output capacitors.