A small random-access memory using deposited magnetic thin films as storage elements, and with a cycle time of one microsecond, is described. Information is read from or written into the memory by linear or word selection techniques. The addressing, driving and sensing circuits are transistorized. The deposited thin films are 2000 Å thick, switch in 0.1 μsec and generate a 5-mv output signal in the sense winding. A sense signal is obtained of opposite polarity from a selected element when a ``1'' or a ``0'' is read out. A memory-plane wiring configuration has been selected which is least susceptible to noise.