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Nicholas Petrone

dblp:131/1907 · DBLP profile ↗
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1ranked-venue papers
0as first author
0since 2021 · last 2013
0000-0003-1995-4077ORCID · reported

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 100%

Topics — the 4 heaviest of 4, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › semiconductor devices
field-effect transistor		 0.212013
Graphene Field-Effect Transistors Based on Boron-Nitride Dielectrics · Proc. IEEE 2013
Integrated circuit design › emerging device technologies
graphene-based devices		 0.212013
Graphene Field-Effect Transistors Based on Boron-Nitride Dielectrics · Proc. IEEE 2013
Integrated circuit design › semiconductor devices › field-effect transistor
graphene field-effect transistors		 0.212013
Graphene Field-Effect Transistors Based on Boron-Nitride Dielectrics · Proc. IEEE 2013
Integrated circuit design › semiconductor devices
transistor		 0.212013
Graphene Field-Effect Transistors Based on Boron-Nitride Dielectrics · Proc. IEEE 2013
YearPublicationVenuePosition
2013 Graphene Field-Effect Transistors Based on Boron-Nitride Dielectrics
abstract
Two-dimensional atomic sheets of graphene represent a new class of nanoscale materials with potential applications in electronics. However, exploiting the intrinsic characteristics of graphene devices has been problematic due to impurities and disorder in the surrounding dielectric and graphene/dielectric interfaces. Recent advancements in fabricating graphene heterostructures by alternately layering graphene with crystalline hexagonal boron nitride (hBN), its insulating isomorph, have led to an order of magnitude improvement in graphene device quality. Here, recent developments in graphene devices utilizing boron-nitride dielectrics are reviewed. Field-effect transistor (FET) characteristics of these systems at high bias are examined. Additionally, existing challenges in material synthesis and fabrication and the potential of graphene/BN heterostructures for novel electronic applications are discussed.
Inanc Meric, Cory R. Dean, Nicholas Petrone, Lei Wang 0044, James C. Hone, Philip Kim, Kenneth L. Shepard
 Proc. IEEE3