VLDB 2026 Research / reviewers in the wild / expert
Kristy A. Campbell
dblp:14/6582
· DBLP profile ↗
2ranked-venue papers
0as first author
0since 2021 · last 2015
0000-0003-3734-3616ORCID · verified
Domains — the database's venue-derived domains; a paper can count in several
Artificial intelligence and machine learning · 1Applied, interdisciplinary, general and emerging computing · 1
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Memory systems · 44% Emerging computing paradigms · 44% Integrated circuit design · 13% |
Topics — the 3 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Emerging computing paradigms › neuromorphic computing
memristive devices |
0.2 | 1 | 2015 | Reconfigurable Memristive Device Technologies · Proc. IEEE 2015 |
Memory systems
non-volatile memory |
0.2 | 1 | 2015 | Reconfigurable Memristive Device Technologies · Proc. IEEE 2015 |
Integrated circuit design
3d integration |
0.1 | 1 | 2015 | Reconfigurable Memristive Device Technologies · Proc. IEEE 2015 |
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2015 | Reconfigurable Memristive Device TechnologiesabstractIn this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo-metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments. Arthur H. Edwards, Hugh J. Barnaby, Kristy A. Campbell, Michael N. Kozicki, Wei Liu 0003, Matthew J. Marinella |
Proc. IEEE | 3 |
| 2010 | Silver chalcogenide based memristor devicesabstractWe have fabricated two-terminal chalcogenide-based devices containing Ge2Se3and Ag that function as memristors. These devices have been electrically characterized at room temperature using quasi-static DC methods, AC sinusoidal methods, and AC pulse testing methods. In all cases, the devices exhibit memristive behavior. Antonio S. Oblea, Achyut Timilsina, Kristy A. Campbell |
IJCNN | 4 |