Demo Data from VLDB 2026 / reviewers in the wild / expert
Xiaorong Luo
dblp:141/7733
· DBLP profile ↗
4ranked-venue papers
1as first author
1since 2021 · last 2022
0000-0001-5973-3258ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 4 · 1 first-author · 1 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
4 papers |
Integrated circuit design · 100% |
Topics — the 5 heaviest of 6, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
power semiconductor devices |
1.2 | 3 | 2022 | Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate · Sci. China Inf. Sci. 2022 High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels · Sci. China Inf. Sci. 2018 Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer · Sci. China Inf. Sci. 2016 |
Integrated circuit design › semiconductor devices
semiconductor device design |
0.6 | 2 | 2022 | Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers · Sci. China Inf. Sci. 2019 Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate · Sci. China Inf. Sci. 2022 |
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor |
0.3 | 1 | 2018 | High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels · Sci. China Inf. Sci. 2018 |
Integrated circuit design › semiconductor devices › GaN HEMT
AlGaN/GaN HEMT |
0.2 | 1 | 2016 | Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer · Sci. China Inf. Sci. 2016 |
Integrated circuit design › semiconductor devices › GaN HEMT
gallium nitride device |
0.1 | 1 | 2019 | Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers · Sci. China Inf. Sci. 2019 |
Methods — techniques the papers use, named apart from their topics
device simulation · 1.0hole-gas enhancement · 0.3
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2022 | Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate
Xiaorong Luo, Junyue Huang, Xu Song, Qinfeng Jiang |
Sci. China Inf. Sci. | 1 |
| 2019 | Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers
Fu Peng, Chao Yang 0033, Siyu Deng, Dongya Ouyang, Bo Zhang 0027, Xiaorong Luo |
Sci. China Inf. Sci. | 7 |
| 2018 | High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels
Chao Yang 0033, Xiaorong Luo, Siyu Deng, Fu Peng, Bo Zhang 0027 |
Sci. China Inf. Sci. | 2 |
| 2016 | Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer
Jiayun Xiong, Chao Yang 0033, Bo Zhang 0027, Xiaorong Luo |
Sci. China Inf. Sci. | 6 |