Demo Data from VLDB 2026 / reviewers in the wild / expert
Kangliang Wei
dblp:141/7737
· DBLP profile ↗
1ranked-venue papers
1as first author
0since 2021 · last 2014
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 1 · 1 first-author
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 3 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices › multi-gate devices
FinFET |
0.2 | 1 | 2014 | Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric · Sci. China Inf. Sci. 2014 |
Integrated circuit design
semiconductor device modeling |
0.2 | 1 | 2014 | Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric · Sci. China Inf. Sci. 2014 |
Integrated circuit design › semiconductor technology › semiconductor process technology
high-k dielectric |
0.1 | 1 | 2014 | Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric · Sci. China Inf. Sci. 2014 |
Methods — techniques the papers use, named apart from their topics
full coulomb interaction approach · 0.2
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2014 | Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric
Kangliang Wei, James Egley, Gang Du |
Sci. China Inf. Sci. | 1 |