Yue Hao 0001

dblp:17/1995-1 · DBLP profile ↗
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53ranked-venue papers
1as first author
48since 2021 · last 2026
0000-0002-8081-2919ORCID · conflict

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 42 · 1 first-author · 37 since 2021Systems, architecture and hardware · 6 · 6 since 2021Artificial intelligence and machine learning · 4 · 4 since 2021Computer networks · 1 · 1 since 2021
YearPublicationVenuePosition
2026 2.5 kV/674 MW/cm2 or 100 A/2 kV β-Ga2O3 heterojunction diodes with large surge current and small recovery time
Yitao Feng, Guotao Tian, Yue Hao 0001, Jincheng Zhang 0001
Sci. China Inf. Sci.7
2026 High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap
Hao Lu 0012, Ling Yang 0003, Bin Hou, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.8
2026 High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process
Hao Lu 0012, Xiaohua Ma 0001, Longge Deng, Ling Yang 0003, Bin Hou, Yue Hao 0001
Sci. China Inf. Sci.8
2026 A 1-10 GHz frequency-agile high-power GaN linear photoconductive semiconductor switch
Xiaoli Lu, Xiangjin Chen, Jingliang Liu, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.9
2026 High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs
Ling Yang 0003, Chunzhou Shi, Bin Hou, Hao Lu 0012, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.12
2026 First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs
Jincheng Zhang 0001, Shudong Huo, Zhengxing Zhang, Mengjiao Xiang, Menghan Zheng, Yachao Zhang 0002, Xiufeng Song, Kui Dang, Yue Hao 0001
Sci. China Inf. Sci.12
2026 Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy
Yanning Zhang 0001, Haidi Wu, Xinchen Ji, Zhichun Yang, Xinbo Zhang, Ling Bai, Juncheng Zheng, Yue Hao 0001, Jincheng Zhang 0001
Sci. China Inf. Sci.11
2026 FPGA-based hardware accelerator designed for convolutional residual spiking neural networks
Chenyang Du, Licun Yu, Genquan Han, Yue Hao 0001
Sci. China Inf. Sci.9
2026 Physical structure-based small signal modeling for GaN Fin-HEMTs
Ziyue Zhao 0003, Chupeng Yi, Ting Feng 0002, Xin Liu 0063, Guanghai Yao, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.10
2026 Stochastic modeling of microcavity laser-based photonic reservoir computing: An information processing capacity perspective
Juncheng Huang, Kathy Lüdge, Yanan Han, Yue Hao 0001
Neural Networks6
2026 A Grouped Sorting Queue Supporting Dynamic Updates for Timer Management in High-Speed Network Interface Cards
Binghao Yue, Weitao Pan, Jiangyi Shi, Yue Hao 0001
IEEE Trans. Computers5
2025 A High-Precision and Low-Cost Approximate Transform Accelerator for Video Coding
abstract
The introduction of multiple transform types in the Versatile Video Coding (VVC) standard has yielded notable encoding gains but also imposed considerable computational burdens. Existing transform circuits of different types are typically implemented separately due to their independence, leading to substantial hardware overhead. To address this, we explore the relationship between Discrete Cosine Transform Type-2 (DCT2) and Discrete Sine Transform Type-7 (DST7) matrices and reveal a prominent diagonal aggregation phenomenon in their transfer matrix. Based on this insight, the least-squares method is applied to optimize the transfer matrix sparsity, achieving a high-precision, low-cost approximate conversion from DCT2 to DST7. Furthermore, we optimize DCT2 computation by proposing an elaborate matrix decomposition approach that allows a lightweight shift-adder unit to efficiently generate all required product terms across varying sizes. Leveraging these algorithmic optimizations, we implement a highly reusable and area-efficient approximate transform accelerator that supports sizes from 4 to 32 points and accommodates three types in VVC. Experimental results demonstrate that the proposed accelerator achieves over 44% reduction in circuit resource consumption with negligible BD-BR performance loss of just $\mathbf{0. 5 3 \%}$, maintaining processing capabilities up to $8 K \text{@} 57 \mathrm{fps}$.
Zhijian Hao, Chenlong He, Qi Zheng 0004, Shushi Chen, Jinchang Xu, Yue Hao 0001, Xiaohua Ma 0001
DAC7
2025 1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations
Yitao Feng, Sami Alghamdi, Guotao Tian, Saud Wasly, Yue Hao 0001, Jincheng Zhang 0001
Sci. China Inf. Sci.9
2025 High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure
Can Gong, Minhan Mi, Yuwei Zhou, Hanzhen Li, Xinyi Wen, Sirui An, Xiang Du, Qing Zhu 0013, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.14
2025 Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT
Mao Jia, Bin Hou, Ling Yang 0003, Hao Lu 0012, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.13
2025 Potential of boron nitride/diamond heterostructures for n- and p-type conduction
Jichao Hu, Zeyang Ren, Jiaduo Zhu, Yachao Zhang 0002, Yue Hao 0001
Sci. China Inf. Sci.11
2025 Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax × LG
Lingjie Qin, Jiejie Zhu, Huantao Duan, Huimei Ma, Simei Huang, Jin Rao, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.11
2025 Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity
Danyang Yao, Dongxin Tan, Qiyu Yang, Xuetao Gan, Yue Hao 0001, Genquan Han
Sci. China Inf. Sci.10
2025 Physics based circuit compatible model for hybrid antiferroelectric random access memory
Qiuxia Wu, Wenwu Xiao, Wenxuan Ma 0008, Chunfu Zhang, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.9
2025 24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer
Sami Alghamdi, Yue Hao 0001
Sci. China Inf. Sci.6
2025 Class-F-1 GaN Power Amplifier Integrated Active Antenna With Increased Efficiency for Wireless Power Transmission Applications
abstract
This article introduces a novel power amplifier integrated active antenna (PAIAA) with increased efficiency that integrates a Class-$F {^{-}1 }$Gallium Nitride (GaN) power amplifier (PA) and a stub-loaded wide slot antenna (SLSA) for wireless power transmission (WPT) applications. Unlike conventional PA integrated active antennas in which antennas and PAs are separately matched to 50 ohms, the input impedance of the SLSA is meticulously engineered to match the fundamental impedance and modulate harmonic impedances of the GaN transistor by optimizing the dimensions of the SLSA's stubs. This approach eliminates the output matching network (OMN), the PA's harmonic modulation network (HMN), and the antenna's input matching network (IMN), which typically incur unavoidable insertion loss but are essential for conventional Class-$F {^{-}1 }$PAs and antennas. Consequently, it enhances the power-added efficiency (PAE) within the 3.3–3.8-GHz range and reduces the overall size of the PA integrated active antenna. Thanks to the extended design freedom offered by SLSA, precise impedance values can be achieved across a broader frequency range, resulting in increased efficiency across a larger spectrum. In addition, an innovative insertion loss measurement method for impedance matching network with a non-50-$\Omega $port is introduced to accurately measure the Class-$F {^{-}1 }$PA's PAE incorporated in the proposed PAIAA. The measured PAIAA demonstrates a peak PAE of 70.1%, surpassing the performances of reported integrated active antennas. The measured effective isotropic radiated power (EIRP) of the proposed PAIAA is 44.52 dBm. A conventional PA-antenna design, where an antenna and a Class-$F {^{-}1 }$PA are separately matched to$50~\Omega $and simply cascaded, is also designed and measured as a contrast, whose measured peak PAE and EIRP of the conventional design are only 61.5% and 43.9 dBm, respectively. The proposed PAIAA, with its increased efficiency, can be practically utilized for WPT applications in the Internet of Things (IoT), where efficiency performance is critical.
Wenliang Liu 0003, Jing-Ya Deng, Chupeng Yi, Ziyue Zhao 0003, Ting Feng 0002, Xin Liu 0063, Xiaohua Ma 0001, Yue Hao 0001
IEEE Internet Things J.9
2025 S4-KD: A single step spiking SiamFC+ + for object tracking with knowledge distillation
Wenzhuo Liu, Tao Zhang 0090, Yanan Han, Licun Yu, Yue Hao 0001
Neural Networks8
2025 Hardware Trojan Detection Methods for Gate-Level Netlists Based on Graph Neural Networks
abstract
Currently, untrusted third-party entities are increasingly involved in various stages of IC design and manufacturing, posing a significant threat to the reliability and security of SoCs due to the presence of hardware Trojans (HTs). In this paper, gate-level HT detection methods based on graph neural networks (GNNs) are established to overcome the defects of existing machine learning, which makes it difficult to characterize circuit connection relationships. We introduce harmonic centrality in the feature engineering of gate-level HT detection, which reflects the positional information of nodes and their adjacent nodes in the graph, thereby enhancing the quality of feature engineering. We use the golden section weight optimization algorithm to configure penalty weights to alleviate the problem of extreme data imbalance. In the SAED database, GraphSAGE-LSTM model obtained a TPR of 88.06% and an average F1 score of 90.95%. In the combined HT netlist of LEDA datasets, GraphSAGE-POOL model obtains a TPR of 88.50% and the best F1 score of 92.17%. In sequential HT netlist, GraphSAGE-LSTM model performs optimally, with a TPR of 98.25% and an average F1 score of 98.59%. Compared to existing detection models, the F1 score is enhanced by 8.86% and 2.48% on combined and sequential HT datasets, respectively.
Peijun Ma, Hongjin Liu, Jiangyi Shi, Weitao Pan, Yue Hao 0001
IEEE Trans. Computers7
2025 A Novel Transform Accelerator With Fast Kernel Selection and Efficient Transform Circuit
abstract
The introduction of multiple transform types into the Versatile Video Coding (VVC) standard has yielded notable encoding gains but also resulted in substantial computational burdens, posing two critical challenges for hardware implementation: fast kernel selection and efficient transform computation design. Existing studies typically address these challenges in isolation, lacking a holistic solution for VVC transform coding. In this paper, we presents a groundbreaking transform accelerator that unifies transform kernel selection and multiple transform circuit within a single framework. In terms of algorithms, driven by mechanistic analysis, we propose a decision tree-based kernel selection algorithm that ensures both high decision accuracy and computational efficiency. Additionally, we design a transfer matrix-based approximation algorithm for Discrete Sine Transform Type-7 and a matrix decomposition-based improved computation for Discrete Cosine Transform Type-2, significantly reducing the computational complexity. On the hardware front, we implement a high-precision and area-efficient transform accelerator, which integrates highly pipelined kernel selection and transform computation architectures. With multiple reuse and parallelism strategies, the accelerator demonstrates substantial resource efficiency advantages. Experimental results reveal that the proposed accelerator achieves a circuit resource reduction of over 44% with a slight performance degradation, while maintaining processing capabilities up to 8K@57 fps. To the best of our knowledge, this is the first comprehensive hardware solution for VVC transform coding that jointly addresses the challenges of kernel selection and transform circuit design.
Zhijian Hao, Chenlong He, Qi Zheng 0004, Jinchang Xu, Peijun Ma, Xiaohua Ma 0001, Yue Hao 0001
IEEE Trans. Circuits Syst. I Regul. Pap.8
2025 GNN-Based Hardware Trojan Detection at Register Transfer Level Leveraging Multiple-Category Features
abstract
The existing hardware Trojan (HT) detection technology usually relies on the golden reference model. With the continuous improvement of circuit integration, the detection accuracy of traditional methods such as side-channel analysis has declined. Methods based on testability and switch probability analysis have shown high detection accuracy. However, these techniques have a limited detection scope and are generally ineffective at identifying HT where the Sandia controllability/observability analysis program (SCOAP) values or switch probabilities are similar to those of normal signals. Against this backdrop, this article proposes a detection method based on graph neural networks (GNNs), which can achieve HT detection at the register transfer level (RTL) without the golden reference model. First, the RTL code is transformed into a data flow graph (DFG), and node feature extraction and node label marking are carried out during the transformation process. To mitigate the impact of insufficient initial features on the GNN model performance, the node feature vector used in this article comprises 37-D node types and 6-D structural features such as the minimum distance from the primary input (PI) and primary output (PO), in-degree, and out-degree. Subsequently, several GNN models are built for node classification tasks. The best model achieves an average of 99.1% recall and 96.7% F1-score on the open-source dataset on the Trust-Hub platform. Compared to the state-of-the-art detection results at RTL, the F1-score in this article has increased by an average of 3.8%.
Peijun Ma, Ge Shang, Hongjin Liu, Jiangyi Shi, Weitao Pan, Yue Hao 0001
IEEE Trans. Very Large Scale Integr. Syst.7
2025 Corrections to "GNN-Based Hardware Trojan Detection at Register Transfer Level Leveraging Multiple-Category Features"
abstract
Presents corrections to the paper, (Corrections to “GNN-Based Hardware Trojan Detection at Register Transfer Level Leveraging Multiple-Category Features”).
Peijun Ma, Ge Shang, Hongjin Liu, Jiangyi Shi, Weitao Pan, Yue Hao 0001
IEEE Trans. Very Large Scale Integr. Syst.7
2024 $\beta$-Ga2O3-on-SiC RF MOSFETs $\beta$
abstract
In this letter, we demonstrate the ß-Ga2O3-on-SiC RF power MOSFETs with peak transconductance$(\mathrm{g}_{\mathrm{m},\max})$of 57 mS/mm, output power density$(\mathrm{P}_{\text{out}})/\text{power}$added efficiency (PAE) of 2.4 W/mm/27.4%and a peak PAE of 36.2%@2 GHz, benefiting from a heavily doped channel to reduce channel resistance and a high thermal conductivity SiC substrate to enhance heat dissipation. Meanwhile, we report the microwave noise characteristics of$\beta-\text{Ga}2\mathrm{O}_{3}$RF transistors with a low minimum-noise figure$(\text{NF}_{\min})$of 2.6 dB @2 GHz.$\beta-\text{Ga}2\mathrm{O}_{3}$-on-SiC RF power MOSFETs with heavily doped channel verify the great promise for future high voltage, high power and low noise RF applications.
Jincheng Zhang 0001, Yue Hao 0001
TENCON4
2024 A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness
Sirui An, Minhan Mi, Qing Zhu 0013, Jielong Liu, Siyin Guo, Can Gong, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.12
2024 High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation
Qingyuan Chang, Bin Hou, Ling Yang 0003, Hao Lu 0012, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Youjun Zhu, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.16
2024 High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz
Hanghai Du, Lu Hao, Yachao Zhang 0002, Kui Dang, Zan Li 0001, Jincheng Zhang 0001, Yue Hao 0001
Sci. China Inf. Sci.11
2024 Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate
Wen Hong, Xuefeng Zheng, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.6
2024 Tunable lithium niobate metasurfaces for phase-only modulation based on quasi-bound states in the continuum
Ruoying Kanyang, Cizhe Fang, Yue Hao 0001, Genquan Han
Sci. China Inf. Sci.7
2024 Two-dimensional materials for future information technology: status and prospects
abstract
Abstract Over the past 70 years, the semiconductor industry has undergone transformative changes, largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.
Hao Qiu 0001, Zhihao Yu, Tiange Zhao, Mingsheng Xu, Taotao Li, Wenzhong Bao, Yang Chai, Shula Chen, Hui-Ming Cheng, Daoxin Dai, Zengfeng Di, Zhuo Dong, Xidong Duan, Yuhan Feng, Jingshu Guo, Pengwen Guo, Yue Hao 0001, Jingyi Hu, Weida Hu, Zehua Hu, Ali Imran 0004, Ziqiang Kong, Bilu Liu, Chunsen Liu, Guanyu Liu, Kaihui Liu, Donglin Lu, Likuan Ma, Feng Miao, Zhenhua Ni, Anlian Pan, Haowen Shu, Quanyang Tao, Ziao Tian, Haomin Wang 0005, Yeliang Wang, Haidi Wu, Hongzhao Wu, Jiangbin Wu, Yanqing Wu, Longfei Xia, Baixu Xiang, Luwen Xing, Qihua Xiong, Jeffrey Xu, Yang Xu 0035, Yuekun Yang, Jincheng Zhang 0001, Tao Zhang 0090, Xinbo Zhang, Chunsong Zhao, Yuda Zhao, Ting Zheng, Peng Zhou 0021, Shaohua Kevin Zhou, Deren Yang
Sci. China Inf. Sci.21
2024 Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure
Chunzhou Shi, Ling Yang 0003, Hao Lu 0012, Bin Hou, Xuerui Niu, Wenliang Liu 0003, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.12
2024 Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic
Dongxin Tan, Cizhe Fang, Zheng-Dong Luo, Qiyu Yang, Xuetao Gan, Yue Hao 0001, Genquan Han
Sci. China Inf. Sci.10
2024 Judgmentally adjusted Q-values based on Q-ensemble for offline reinforcement learning
Wenzhuo Liu, Shuying Xiang, Tao Zhang 0090, Yanan Han, Yue Hao 0001
Neural Comput. Appl.7
2023 Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light
Qing Zhu 0013, Jiejie Zhu, Minhan Mi, Yuwei Zhou, Ziyue Zhao 0003, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.9
2023 2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity
Ren Huang, Jincheng Zhang 0001, Chunxu Su, Liyu Fu, Yue Hao 0001
Sci. China Inf. Sci.7
2023 1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate
Sheng-Lei Zhao, Jincheng Zhang 0001, Yachao Zhang 0002, Lansheng Feng, Xiufeng Song, Yixin Yao, Shengrui Xu, Yue Hao 0001
Sci. China Inf. Sci.11
2022 Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method
Xiaohua Ma 0001, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Qing Zhu 0013, Ling Yang 0003, Yue Hao 0001
Sci. China Inf. Sci.10
2022 Experimental demonstration of photonic spike-timing-dependent plasticity based on a VCSOA
Xingyu Cao, Yue Hao 0001
Sci. China Inf. Sci.5
2022 Unidirectional p-GaN gate HEMT with composite source-drain field plates
Haiyong Wang, Shenglei Zhao, Yuanhao He, Jiabo Chen, Xuefeng Zheng, Chunfu Zhang, Jincheng Zhang 0001, Yue Hao 0001
Sci. China Inf. Sci.11
2022 Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs
Yinhe Wu, Jincheng Zhang 0001, Shenglei Zhao, Zhaoxi Wu, Zhongxu Wang, Bo Mei, Dujun Zhao, Yue Hao 0001
Sci. China Inf. Sci.11
2022 Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate
Dujun Zhao, Zhaoxi Wu, Bo Mei, Zhongxu Wang, Yinhe Wu, Shenglei Zhao, Jincheng Zhang 0001, Yue Hao 0001
Sci. China Inf. Sci.14
2021 Recent progress of integrated circuits and optoelectronic chips
Yue Hao 0001, Genquan Han, Jincheng Zhang 0001, Xiaohua Ma 0001, Zhangming Zhu, Yanan Han, Ling Yang 0003, Jiangyi Shi, Wei Zhang 0343, Biao Pan, Yangqi Huang, Qi Liu 0010, Yimao Cai, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao 0006, Guoping Guo, Yonghua Chen, Xiangfei Chen, Chunlai Xue, Lixia Zhao, Xihua Zou, Lianshan Yan
Sci. China Inf. Sci.1
2021 High mobility germanium-on-insulator p-channel FinFETs
Genquan Han, Jiuren Zhou, Yue Hao 0001
Sci. China Inf. Sci.5
2021 A modified supervised learning rule for training a photonic spiking neural network to recognize digital patterns
Yue Hao 0001
Sci. China Inf. Sci.5
2021 Computing Primitive of Fully VCSEL-Based All-Optical Spiking Neural Network for Supervised Learning and Pattern Classification
abstract
We propose computing primitive for an all-optical spiking neural network (SNN) based on vertical-cavity surface-emitting lasers (VCSELs) for supervised learning by using biologically plausible mechanisms. The spike-timing-dependent plasticity (STDP) model was established based on the dynamics of the vertical-cavity semiconductor optical amplifier (VCSOA) subject to dual-optical pulse injection. The neuron-synapse self-consistent unified model of the all-optical SNN was developed, which enables reproducing the essential neuron-like dynamics and STDP function. Optical character numbers are trained and tested by the proposed fully VCSEL-based all-optical SNN. Simulation results show that the proposed all-optical SNN is capable of recognizing ten numbers by a supervised learning algorithm, in which the input and output patterns as well as the teacher signals of the all-optical SNN are represented by spatiotemporal fashions. Moreover, the lateral inhibition is not required in our proposed architecture, which is friendly to the hardware implementation. The system-level unified model enables architecture-algorithm codesigns and optimization of all-optical SNN. To the best of our knowledge, the computing primitive of an all-optical SNN based on VCSELs for supervised learning has not yet been reported, which paves the way toward fully VCSEL-based large-scale photonic neuromorphic systems with low power consumption.
Zhenxing Ren, Genquan Han, Yue Hao 0001
IEEE Trans. Neural Networks Learn. Syst.7
2020 Enhanced memory capacity of a neuromorphic reservoir computing system based on a VCSEL with double optical feedbacks
Yue Hao 0001
Sci. China Inf. Sci.5
2020 Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection
Yanan Han, Genquan Han, Yue Hao 0001
Sci. China Inf. Sci.6
2014 Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp
Yuan Wang 0001, Xing Zhang 0002, Xiaohua Ma 0001, Yue Hao 0001
Sci. China Inf. Sci.5
2010 Finite element analysis and optimization of temperature field in GaN-MOCVD reactor
Jincheng Zhang 0001, Yue Hao 0001, Peixian Li
Sci. China Inf. Sci.3
2008 The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content
Yue Hao 0001, Jincheng Zhang 0001, JinYu Ni
Sci. China Ser. F Inf. Sci.2