This paper describes the architecture, design, analysis, and simulation and measurement results of the 3D-MAPS (3D massively parallel processor with stacked memory) chip built with a 1.5 V, 130 nm process technology and a two-tier 3D stacking technology using 1.2$\micro\hbox{m}$-diameter, 6$\micro \hbox{m}$-height through-silicon vias (TSVs) and$3.4\nbsp\micro\hbox{m}$-diameter face-to-face bond pads. 3D-MAPS consists of a core tier containing 64 cores and a memory tier containing 64 memory blocks. Each core communicates with its dedicated 4KB SRAM block using face-to-face bond pads, which provide negligible data transfer delay between the core and the memory tiers. The maximum operating frequency is 277 MHz and the maximum memory bandwidth is 70.9 GB/s at 277 MHz. The peak measured memory bandwidth usage is 63.8 GB/s and the peak measured power is approximately 4 W based on eight parallel benchmarks.

The 3D IC integration using through-silicon-vias (TSV) has gained tremendous momentum recently for industry adoption. However, as TSV involves disruptive manufacturing technologies, new modeling and design techniques need to be developed for 3D IC manufacturability and reliability. In particular, TSVs in 3D IC may cause significant thermal mechanical stress, which not only results in systematic mobility/performance variations, but also leads to mechanical reliability concerns such as interfacial cracking. Meanwhile, the huge dimensional gaps between TSV, on-chip wires, and bonding/packaging all lead to new electromigration concerns. Thus full-chip/package modeling and physical design tools need to be developed to achieve more reliable 3D IC integration. In this paper, we will discuss some key design for manufacturability and reliability challenges and possible solutions for TSV-based 3D IC integration, as well as future research directions.

In this paper, we propose two methods used in 3D IC placement that effectively exploit the die-to-die thermal coupling in the stack. First, TSVs are spread on each die to reduce the local power density and vertically aligned across dies simultaneously to increase thermal conductivity to the heatsink. Second, we move high-power logic cells to the location that has higher conductivity to the heatsink while moving TSVs in the upper dies so that high-power cells are vertically overlapping below the TSVs. These methods are employed in a force-directed 3D placement successfully and outperform several state-of-the-art placers published in recent literature.

Electromigration (EM) is a critical problem for interconnect reliability of modern integrated circuits (ICs), especially as the feature size becomes smaller. In three-dimensional (3D) IC technology, the EM problem becomes more severe due to drastic dimension mismatches between metal wires, through silicon vias (TSVs), and landing pads. Meanwhile, the thermo-mechanical stress due to the TSV can also cause reduction in the failure time of wires. However, there is very little study on EM issues that consider TSVs in 3D ICs. In this paper, we show the impact of TSV stress on EM failure time of metal wires in 3D ICs. We model the impact of TSV on stress variation in wires. We then perform detailed modeling of the impact of stress on EM failure time of metal wires. Based on our analysis, we build a detailed library to predict the failure time of a given wire based on current density, temperature and stress. We then propose a method to perform fast full-chip simulation, to determine the various EM related hot-spots in the design. We also propose a simple routing-blockage scheme to reduce the EM related failures near the TSVs, and see its impact on various metrics.

In 3D integrated circuits through silicon vias (TSVs) are used to connect different dies stacked on top of each other. These TSV occupy silicon area and have significantly larger area than regular gates. In this paper, we address two critical aspects of TSV management in 3D designs. First, we address the problem of how many TSVs to add in a design. Since TSVs occupy significant silicon area, a general tendency has been to use a minimum number of TSVs in 3D circuits. We show that such an approach does not give us the best possible result. Second, we address the problem of TSV insertion. Because TSVs occupy silicon area, their location is decided during the placement stage of 3D design. However, we show that this is not the best possible stage for TSV insertion. We propose a change in the physical design flow for 3D integrated circuits to address the limitations of existing TSV placement methodology. All our algorithms are integrated with commercial tools, and our results are validated based on actual GDSII layouts. Our experimental results show the effectiveness of our methods.

In this paper, we present a performance and thermal-aware Steiner routing algorithm for three-dimensional (3-D) stacked integrated circuits. Our algorithm consists of two steps: tree construction and tree refinement. Our tree construction algorithm builds a delay-oriented Steiner tree under a given thermal profile. We show that our 3-D tree construction involves minimization of two-variable Elmore delay function. In our tree refinement algorithm, we reposition the through-silicon-vias (TSVs) used in existing Steiner trees while preserving the original routing topology for further thermal optimization under a performance constraint. We employ a novel scheme to relax the initial nonlinear programming formulation to integer linear programming and consider all TSVs from all nets simultaneously. Our tree construction algorithm outperforms the popular 3-D maze routing by 52% in terms of performance at the cost of 15% wirelength and 6% TSV count increase for four-die stacking. In addition, our TSV relocation results in 9% maximum-temperature reduction at no additional area cost. We also provide extensive experimental results, including the following: (1) the wirelength and delay distribution of various types of 3-D interconnects; (2) the impact of TSVRCparasitics on routing and TSV relocation; and (3) the impact of various bonding styles on routing and TSV relocation. Last, we provide results on two-die stacking.

In this paper, we present the first work on the Steiner routing for 3D stacked ICs. In the 3D Steiner routing problem, the pins are located in multiple device layers, which makes it more general than its 2D counterpart. Our algorithm consists of two steps: tree construction and tree refinement. Our tree construction algorithm builds a delay-oriented Steiner tree under a given thermal profile. We show that thermal-aware 3D tree construction involves the minimization of two-variable Elmore delay function. In our tree refinement algorithm, we reposition the through-vias while preserving the original routing topology for further thermal optimization under performance constraint. We employ a novel scheme to relax the initial NLP formulation to ILP and consider all through-vias from all nets simultaneously. Our related experiments show the effectiveness of our proposed solutions.

Physical layout generation of RF embedded passive design is not an easy task since the response of a given layout is tightly coupled with the response of the individual components and the effect of interconnect parasitics. In this paper we propose a methodology for automatic layout generation of embedded passive RF circuits. We make use of circuit models to represent and optimize a given layout and use non-linear optimization at various stages of the methodology to obtain the desired goals. Full-wave EM simulations is completely out of the design loop, so our methodology significantly reduces the design time for RF embedded passive circuits. The proposed approach has been used successfully to generate layout for band-pass filters of varying sizes.

In this paper, we study the net and pin distribution problem for global routing targeting three dimensional packaging layout via system-on-package (SOP). The routing environment for the new emerging mixed-signal SOP technology is more advanced than that of the conventional PCB or MCM technology - pins are located at all layers of SOP packaging substrate rather than the top-most layer only. This is the first work to formulate and solve the multi-layer net and pin distribution for layer, wirelength, and crosstalk minimization.