A 4096 word NDRO memory system using the high speed woven wire memory is discussed. The operating principle and the NDRO characteristics of the memory together with stack construction, noise problems, circuitry, and experimental results are explained. The memory weave consists of electroplated magnetic thin-film wires for the digit-sense lines and insulated wires for the word lines, which are mounted on a terminal plate to form a plane. The stack is made up of 32 planes. To minimize noise effects, the word lines are diode-transformer matrix driven and the two-memory-cell per bit method is used in the digit-sense lines. The memory capacity is 4096 words × 10 bits. Cycle times of 400 ns for read and 600 ns for write, respectively, were achieved with high operating stability.