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Jinshun Bi

dblp:191/4871 · DBLP profile ↗
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7ranked-venue papers
0as first author
2since 2021 · last 2022
0000-0003-0114-0040ORCID · corroborated

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 5 · 2 since 2021Systems, architecture and hardware · 2

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
5 papers
Hardware reliability and fault tolerance · 45% Integrated circuit design · 39% Memory systems · 16%

Topics — the 9 heaviest of 10, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Hardware reliability and fault tolerance
radiation effects		 0.722019
Total ionizing dose effects on graphene-based charge-trapping memory · Sci. China Inf. Sci. 2019
Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor · Sci. China Inf. Sci. 2017
Memory systems
non-volatile memory		 0.622021
Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design · Sci. China Inf. Sci. 2021
Total ionizing dose effects on graphene-based charge-trapping memory · Sci. China Inf. Sci. 2019
Integrated circuit design › emerging device technologies
ferroelectric devices		 0.612022
Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions · Sci. China Inf. Sci. 2022
Hardware reliability and fault tolerance › radiation effects
total ionizing dose effects		 0.622022
Total ionizing dose effects on graphene-based charge-trapping memory · Sci. China Inf. Sci. 2019
Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions · Sci. China Inf. Sci. 2022
Integrated circuit design › semiconductor devices › semiconductor device design
transistor design		 0.412020
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors · Sci. China Inf. Sci. 2020
Integrated circuit design › emerging device technologies
tunneling field effect transistor		 0.412020
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors · Sci. China Inf. Sci. 2020
Hardware reliability and fault tolerance
soft errors		 0.322021
Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design · Sci. China Inf. Sci. 2021
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors · Sci. China Inf. Sci. 2020
Hardware reliability and fault tolerance › radiation effects
single event effects		 0.112021
Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design · Sci. China Inf. Sci. 2021
Hardware reliability and fault tolerance › soft errors
single event transient		 0.112020
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors · Sci. China Inf. Sci. 2020

Methods — techniques the papers use, named apart from their topics

material characterization · 0.6simulation · 0.5graphene-based charge-trapping memory · 0.4
YearPublicationVenuePosition
2022 Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions
Xueqin Yang, Yannan Xu, Jinshun Bi, Linjie Fan, Lanlong Ji, Gaobo Xu
 Sci. China Inf. Sci.3
2021 Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design
Jianjian Wang, Jinshun Bi, Bo Li 0051, Sandip Majumdar, Lanlong Ji, Ming Liu 0022, Zhangang Zhang
 Sci. China Inf. Sci.2
2020 Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors
Guoliang Tian, Jinshun Bi, Gaobo Xu, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang 0006
 Sci. China Inf. Sci.2
2019 Total ionizing dose effects on graphene-based charge-trapping memory
Jinshun Bi, Sandip Majumdar, Bo Li 0051, Jing Liu 0035, Yannan Xu, Ming Liu 0022
 Sci. China Inf. Sci.2
2017 Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor
Yannan Xu, Jinshun Bi, Gaobo Xu, Bo Li 0051, Ming Liu 0022
 Sci. China Inf. Sci.2
2015 A Novel Built-in Current Sensor for N-WELL SET Detection
Rui Liu 0011, Li Chen 0001, Jinshun Bi, Mulong Li
 J. Electron. Test.4
2014 Single Event Resilient Dynamic Logic Designs
Mulong Li, Li Chen 0001, Rui Liu 0011, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Rita Fung, Jinshun Bi
 J. Electron. Test.9