An efficient synthesis technique for modern analog circuits is important yet challenging due to the repeatedly re-synthesis process. To precisely explore the analog circuit performance limitation on the required technology is time-consuming. This work presents a learning-based framework for searching the limitation of analog circuits. With hierarchical architecture, the dimension of solution space can be reduced. Bayesian linear regression and support vector machine model are selected to speed up the algorithm and better performance quality can be retrieved. Experimental results show that our approach on two analog circuits can achieve up to 9x runtime speed-up without surrendering performance qualities.

Three dimensional IC (3DIC) is becoming practical in today's consumer electronics designs. However, one major problem remains in design synthesis and flow: how to model heterogeneous die(s) with major logic die for power synthesis and signoff. This work provides a realistic model and principle for heterogeneous dies power network for 3DICs. It is based on given abstract or early stage information like bump location and power consumption from the provider. Our work also uses this model to synthesize power network with bottom logic die in the design flow. The result is DRC clean power network without IR and EM violation for all power domains. First, we analyze the location and power consumption of power bump for heterogeneous die(s). Second, according to previous analysis, we decide the stripe location and power sink location of heterogeneous dies model by a clustering method. After the initial model is synthesized, we convert it to a node graph with corresponding resistance of via and metal layer, also nodal voltages. Third, the model is optimized by using Sequential Linear Programming (SLP) to adjust stripe width. It will improve the model iteratively until the target IR-Drop is met. Furthermore, our work will create a pseudo DEF of the proposed model to be incorporated with the commercial tool for verification. We experiment on a real case from design house containing a 3D DRAM stack to demonstrate the effectiveness of this cross-layer realization. Results show that we can save 34% metal layer usage in one of the power domains in our case by using proposed methodology.