A modified Berkeley short-channel IGFET model (BSIM1) has been developed to accurately model the I-V characteristics and circuit performance of deep submicron MOSFET devices. The improved model provides a simple and more efficient parameter acquisition procedure for MOSFET global modeling in comparison to the original BSIM1 model. The procedure for extracting the global geometry scalable model parameters is described. The extraction procedure provides a decoupling between DC and AC modeling resulting in more accurate time-domain circuit simulations. The proposed modeling procedure eliminates the negative conductance problem experienced in the original BSIM1. The validity of the model is supported by comparisons between measured and simulated results. The focus of this paper is on the digital applications of the BSIM1 SPICE model.

Collocation methods are very useful when one-dimensional Monte Carlo simulations of semiconductor submicron devices require a very accurate solution of Poisson's equation. Potential and electric field may be solved simultaneously with better accuracy than using finite differences. The extension to two dimensions is also outlined. We present the results obtained for Monte Carlo simulation of submicron W/Si and AuGaAs Schottky barrier diodes under forward bias conditions. The accurate solution for the electric field at the ohmic contact boundary allows us to model the injected current and to account for depletion of carriers. Tunnelling effects across the barrier are also included in the simulation.