Demo Data from VLDB 2026 / reviewers in the wild / expert
Imran Mehdi
dblp:200/7329
· DBLP profile ↗
1ranked-venue papers
1as first author
0since 2021 · last 2017
0000-0002-5213-4890ORCID · reported
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 1 · 1 first-author
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% | |
| Computer networks
1 paper |
Cellular and mobile networks · 100% |
Topics — the 2 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices › diode
schottky barrier diodes |
0.3 | 1 | 2017 | THz Diode Technology: Status, Prospects, and Applications · Proc. IEEE 2017 |
Cellular and mobile networks › 6g
terahertz communication |
0.1 | 1 | 2017 | THz Diode Technology: Status, Prospects, and Applications · Proc. IEEE 2017 |
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2017 | THz Diode Technology: Status, Prospects, and ApplicationsabstractFound in many terahertz (THz) and submillimeter-wave systems, GaAs Schottky diodes continue to be one of the most useful THz devices. As a low-parasitic device that operates well into the THz range, Schottky diodes provide useful detection and power generation for a number of practical applications. Mixers and multipliers, working as high as ~3 THz, have already been demonstrated. This paper reviews the current status of diode technology, detailing some of the different ways for fabricating THz chips. An overview regarding the current state of technology and performance for THz frequency multipliers and mixers is presented, along with applications enabled by these diodes. Imran Mehdi, Jose V. Siles, Choonsup Lee, Erich Schlecht |
Proc. IEEE | 1 |