Demo Data from VLDB 2026 / reviewers in the wild / expert
Amlan J. Pal
dblp:202/3347
· DBLP profile ↗
1ranked-venue papers
0as first author
0since 2021 · last 2009
0000-0002-7651-9779ORCID · reported
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 1
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Emerging computing paradigms · 77% Integrated circuit design · 23% |
Topics — the 1 heaviest of 2, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices
memory devices |
0.0 | 1 | 2009 | Organic Memory and Electrical Bistability in a Quinone-Based Charge-Transfer Complex · Proc. IEEE 2009 |
Methods — techniques the papers use, named apart from their topics
electroreduction · 0.1conductance switching · 0.1
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2009 | Organic Memory and Electrical Bistability in a Quinone-Based Charge-Transfer ComplexabstractWe present an overview of the issues of organic memory devices and discuss the mechanisms involved in conductance switching. To make the memory elements addressable, we introduce nanostructures of a quinone-based charge-transfer complex. The devices based on charge-transfer complexes exhibit electrical bistability. Apart from characterizing complex formation, we study characteristics of memory devices based on the complexes. The mechanism of bistability has been discussed in terms of electroreduction of the quinone derivative with the formation of a percolating network of conducting molecules or channels across the device. Depending on the device architecture, a device may exhibit memory-switching or threshold-switching phenomenon. The former system has displayed read-only and random-access memory applications. Arup K. Rath, Amlan J. Pal |
Proc. IEEE | 2 |