Deep neural networks (DNNs) have achieved state-of-the-art performance across diverse domains. However, typical Von Neumann compute paradigms face severe memory bottlenecks. Emerging near-memory and compute-in-memory approaches alleviate this but incur significant peripheral overhead. Computational Random Access Memory (CRAM) based on MRAM enables in-situ logic without peripheral overhead, offering a dense, energy-efficient solution. However, probabilistic MRAM switching induces gate-level errors that limit the scalability and reliability of CRAM for accelerating DNN. Moreover, the large number of sequential MRAM writes severely constrains CRAM throughput. To address these challenges, we propose an error-resilient CRAM (CRAM-ER) architecture for scalable in-memory matrix-vector multiplications (MVMs). Our error-aware hardware-software co-design framework leverages a hybrid spintronic-CRAM + CMOS adder-tree architecture to mitigate the impact of device-level errors, demonstrating MVM functionality with high area and energy efficiency. We further develop an error-aware model fine-tuning and fine-grained error correction for enhanced error resilience. Evaluations of the CMOS+spintronic hybrid architecture on DNN benchmarks show near-lossless accuracy while reducing CRAM latency by up to 2 orders of magnitude, outperforming CPU/GPU+high-bandwidth DRAM in both energy efficiency and energy-delay product.

Beyond edge devicescan function off the power grid and without batteries, making them suitable for deployment in hard-to-reach environments. As the energy budget is extremely tight, energy-hungry long-distance communication required for offloading computation or reporting results to a server becomes a significant limitation. Based on the observation that the energy required for communication decreases with shorter distances, this paper makes a case for the deployment ofsecure beyond edge miniservers. These are strategically positioned, lightweight local servers designed to support beyond edge devices without compromising the privacy of sensitive information. We demonstrate that even for relatively small scale representative computations – which are more likely to fit into the tight power budget of a beyond edge device for local processing – deploying a beyond edge miniserver can lead to higher performance. To this end, we consider representative deployment scenarios of practical importance, including but not limited to agricultural systems or building structures, where beyond edge miniservers enable highly energy-efficient real-time data processing.

Computing-in-memory (CIM) architectures that perform logic gate operations directly within memory arrays, in-situ, are particularly effective in addressing memory-induced performance bottlenecks. When paired with nonvolatile memory, energy efficiency in performing bulk bitwise logic operations can reach unprecedented levels. However, unlocking this potential is not possible if functional correctness is compromised. In this paper we present a CIM-specific class of functional errors termed gate flips, where parametric variations make a logic gate behave as another. Through detailed functional and electrical characterization we demonstrate that gate flips stem from a significant subclass of write errors. Accordingly, we introduce an abstract model to enable efficient functional reliability assessment and to guide design decisions in forming universal CIM gate libraries. We also evaluate the impact on the end accuracy of computation using representative benchmarks.

Processing in memory (PiM) represents a promising computing paradigm to enhance performance of numerous dataintensive applications. Variants performing computing directly in emerging nonvolatile memories can deliver very high energy efficiency. PiM architectures directly inherit the vulnerabilities of the underlying memory substrates, but they also are subject to errors due to the computation in place. Numerous well-established error correcting codes (ECC) for memory exist, and are also considered in the PiM context, however, they typically ignore errors that occur throughout computation. In this paper we revisit the error correction design space for nonvolatile PiM, considering both storage/memory and computation-induced errors, surveying several self-checking and homomorphic approaches. We propose several solutions and analyze their complex performance-area-coverage trade-off, using three representative nonvolatile PiM technologies. All of these solutions guarantee single error correction for both, bulk bitwise computations and ordinary memory/storage errors.

Processing-in-Memory (PIM) architectures have gained popularity due to their ability to alleviate the memory wall by performing large numbers of operations within the memory itself. On top of this, nonvolatile memory (NVM) technologies offer highly energy-efficient operations, rendering processing in NVM especially promising. Unfortunately, a major drawback is that NVM has limited endurance. Even when used for standard memory, nonvolatile technologies face limited lifetimes, which is exacerbated by imbalanced usage of memory cells. PIM significantly increases the number of operations the memory is required to perform, making the problem much worse. In this work, we quantitatively analyze the impact of PIM applications on endurance considering representative memory technologies. Our findings indicate that limited endurance can easily block the performance and energy efficiency potential of PIM architectures. Even the best known technologies of today can fall short of meeting practical lifetime expectations. This highlights the importance of research efforts to improve endurance especially at the device technology level. Our study represents the first step in characterizing the very demanding endurance needs of PIM applications to derive a detailed technology level design specification.

Beyond-edge devices can operate outside the reach of the power grid and without batteries. Such devices can be deployed in large numbers in regions that are difficult to access. Using machine learning, these devices can solve complex problems and relay valuable information back to a host. Many such devices deployed in low Earth orbit can even be used as nanosatellites. Due to the harsh and unpredictable nature of the environment, these devices must be highly energy-efficient, be capable of operating intermittently over a wide temperature range, and be tolerant of radiation. Here, we propose a non-volatile processing-in-memory architecture that is extremely energy-efficient, supports minimal overhead checkpointing for intermittent computing, can operate in a wide range of temperatures, and has a natural resilience to radiation.

Embedded/edge computing comes with a very stringent hardware resource (area) budget and a need for extreme energy efficiency. This motivates repurposing, i.e., reconfiguring hardware resources on demand, where the overhead of reconfiguration itself is subject to the very same tight budgets in area and energy efficiency. Numerous applications running on resource constrained environments such as wearable devices and Internet-of-Things incorporate CAM (Content Addressable Memory) as a key computational building block. In this paper we present CAMeleon -- a novel energy-efficient compute substrate which can seamlessly be reconfigured to perform CAM operations in addition to logic and memory functions. CAMeleon has a similar level of latency to conventional CAM designs based on SRAM and emerging memory technologies (such as STT-MTJ, ReRAM and PCM), however, performs CAM operations more energy-efficiently, consumes less area, and can support traditional logic and memory functions beyond CAM operations on demand thanks to its reconfigurability.

Spiking Neural Networks (SNNs) represent a biologically inspired computation model capable of emulating neural computation in human brain and brain-like structures. The main promise is very low energy consumption. Classic Von Neumann architecture based SNN accelerators in hardware, however, often fall short of addressing demanding computation and data transfer requirements efficiently at scale. In this article, we propose a promising alternative to overcome scalability limitations, based on a network of in-memory SNN accelerators, which can reduce the energy consumption by up to 150.25= when compared to a representative ASIC solution. The significant reduction in energy comes from two key aspects of the hardware design to minimize data communication overheads: (1) each node represents an in-memory SNN accelerator based on a spintronic Computational RAM array, and (2) a novel, De Bruijn graph based architecture establishes the SNN array connectivity.

High resolution Fast Fourier Transform (FFT) is important for various applications while increased memory access and parallelism requirement limits the traditional hardware. In this work, we explore acceleration opportunities for high resolution FFTs in spintronic computational RAM (CRAM) which supports true in-memory processing semantics. We experiment with Spin-Torque-Transfer (STT) and Spin-Hall-Effect (SHE) based CRAMs in implementing CRAFFT, a high resolution FFT accelerator in memory. For one million point fixed-point FFT, we demonstrate that CRAFFT can provide up to 2.57× speedup and 673× energy reduction. We also provide a proof-of-concept extension to floating-point FFT.

There is increasing demand to bring machine learning capabilities to low power devices. By integrating the computational power of machine learning with the deployment capabilities of low power devices, a number of new applications become possible. In some applications, such devices will not even have a battery, and must rely solely on energy harvesting techniques. This puts extreme constraints on the hardware, which must be energy efficient and capable of tolerating interruptions due to power outages. Here, we propose an in-memory machine learning accelerator utilizing non-volatile spintronic memory. The combination of processing-in-memory and non-volatility provides a key advantage in that progress is effectively saved after every operation. This enables instant shut down and restart capabilities with minimal overhead. Additionally, the operations are highly energy efficient leading to low power consumption.

Neural networks span a wide range of applications of industrial and commercial significance. Binary neural networks (BNN) are particularly effective in trading accuracy for performance, energy efficiency, or hardware/software complexity. Here, we introduce a spintronic, re-configurable in-memory BNN accelerator, PIMBALL: P rocessing I n M emory B NN A cce L(L) erator, which allows for massively parallel and energy efficient computation. PIMBALL is capable of being used as a standard spintronic memory (STT-MRAM) array and a computational substrate simultaneously. We evaluate PIMBALL using multiple image classifiers and a genomics kernel. Our simulation results show that PIMBALL is more energy efficient than alternative CPU-, GPU-, and FPGA-based implementations while delivering higher throughput.

As we approach the limits of CMOS scaling, researchers are developing "beyond-CMOS" technologies to sustain the technological benefits associated with device scaling. Spin-tronic technologies have emerged as a promising beyond-CMOS technology due to their inherent benefits over CMOS such as high integration density, low leakage power, radiation hardness, and non-volatility. These benefits make spintronic devices an attractive successor to CMOS-especially for memory circuits. However, spintronic devices generally suffer from slower switching speeds and higher write energy, which limits their usability. In an effort to close the energy-delay gap between CMOS and spintronics, device concepts such as CoMET (Composite-Input Magnetoelectric-base Logic Technology) have been introduced, which collectively leverage material phenomena such as the spin-Hall effect and the magnetoelectric effect to enable fast, energy efficient device operation. In this work, we propose a non-volatile flip-flop (NVFF) based on CoMET technology that is capable of achieving up to two orders of magnitude less write energy than CMOS. This low write energy (≈2 aJ) makes our CoMET NVFF especially attractive to architectures that require frequent backup operations-e.g., for energy harvesting non-volatile processors.

No abstract available.

The Computational Random Access Memory (CRAM) is a platform that makes a small modification to a standard spintronics-based memory array to organically enable logic operations within the array. CRAM provides a true in-memory computational platform that can perform computations within the memory array, as against other methods that send computational tasks to a separate processor module or a near-memory module at the periphery of the memory array. This paper describes how the CRAM structure can be built and utilized, accounting for considerations at the device, gate, and functional levels. Techniques for constructing fundamental gates are first overviewed, accounting for electrical and noise margin considerations. Next, these logic operations are composed to schedule operations in the array that implement basic arithmetic operations such as addition and multiplication. These methods are then demonstrated on 2D convolution with multibit data, and a binary neural inference engine. The performance of the CRAM is analyzed on near-term and longer-term spintronic device technologies. Significant improvements in energy and execution time for the CRAM-based implementation over a near-memory processing system are demonstrated, and can be attributed to the ability of CRAM to overcome the memory access bottleneck, and to provide high levels of parallelism to the computation.

In-memory computing is a promising approach to alleviating the processor-memory data transfer bottleneck in computing systems. While spintronics has attracted great interest as a non-volatile memory technology, recent work has shown that its unique properties can also enable in-memory computing. We summarize efforts in this direction, and describe three different designs that enhance STT-MRAM to perform logic, arithmetic, and vector operations and evaluate transcendental functions within memory arrays.

Many key technologies of our society, including so-called artificial intelligence (AI) and big data, have been enabled by the invention of transistor and its ever-decreasing size and ever-increasing integration at a large scale. However, conventional technologies are confronted with a clear scaling limit. Many recently proposed advanced transistor concepts are also facing an uphill battle in the lab because of necessary performance tradeoffs and limited scaling potential. We argue for a new pathway that could enable exponential scaling for multiple generations. This pathway involves layering multiple technologies that enable new functions beyond those available from conventional and newly proposed transistors. The key principles for this new pathway have been demonstrated through an interdisciplinary team effort at C-SPIN (a STARnet center), where systems designers, device builders, materials scientists and physicists have all worked under one umbrella to overcome key technology barriers. This paper reviews several successful outcomes from this effort on topics such as the spin memory, logic-in-memory, cognitive computing, stochastic and probabilistic computing and reconfigurable information processing.

Many ultra-low power Internet of things (IoT) systems may be powered by energy harvested from ambient sources (e.g., solar radiation, thermal gradients, and WiFi). However, these energy sources can vary significantly in terms of their strengths and on/off patterns. For volatile systems, the intermittent nature of the energy sources necessitates the use of backup/recovery schemes to guarantee computational correctness and forward progress, which incur performance, area and energy overhead. Non-volatile (NV) processors based on spintronic devices, such as Spin-Transfer Torque (STT) memory and All-Spin-Logic (ASL), are more attractive alternatives. These NV devices are capable of achieving forward progress without relying on backup/recovery schemes. This work establishes a general framework for evaluating NV device-based processors for energy harvesting applications. Results demonstrate that NV spintronic processors can achieve significant energy savings (up to 83 x) versus a hybrid CMOS (computation) and STT-RAM (backup) implementation.

As the end draws near for Moore's law, the search for low-power alternatives to complementary metal-oxide-semiconductor (CMOS) technology is intensifying. Among the various post-CMOS candidates, spintronic devices have gained special attention for their potential to overcome the power and performance limitations of CMOS. In particular, all spin logic (ASL) technology, which performs Boolean operations and transfers the output in the spin domain, has been proposed for enabling new capabilities-such as high density, low device count, and nonvolatility-that were previously impossible with CMOS technology. In this paper, first we provide an overview of the history and the current status of the various spintronic devices being pursued by the research community. Then, we describe how spin-based components are integrated into a computing system and the advantages that result. We use a hypothetical spintronic-based Intel Core i7 as a test vehicle to compare the system-level power requirements of ASL- and CMOS-based systems, taking into consideration the unique demands of spin-based interconnects. We conclude with a brief analysis of current limitations and future directions of spintronic research.

The emerging field of spintronics is undergoing exciting developments with the advances recently seen in spintronic devices, such as magnetic tunnel junctions (MTJs). While they make excellent memory devices, recently they have also been used to accomplish logic functions. The properties of MTJs are greatly different from those of electronic devices like CMOS semiconductors. This makes it challenging to design circuits that can efficiently leverage the spintronic capabilities. The current approaches to achieving logic functionality with MTJs include designing an integrated CMOS and MTJ circuit, where CMOS devices are used for implementing the required intermediate read and write circuitry. The problem with this approach is that such intermediate circuitry adds overheads of area, delay and power consumption to the logic circuit. In this paper, we present a circuit to accomplish logic operations using MTJs on data that is stored in other MTJs, without an intermediate electronic circuitry. This thus reduces the performance overheads of the spintronic circuit while also simplifying fabrication. With this circuit, we discuss the notion of performing logic operations with a non-volatile memory device and compare it with the traditional method of computation with separate logic and memory units. We find that the MTJ-based logic unit has the potential to offer a higher energy-delay efficiency than that of a CMOS-based logic operation on data stored in a separate memory module.