Demo Data from VLDB 2026 / reviewers in the wild / expert
Yannan Xu
dblp:212/6735
· DBLP profile ↗
4ranked-venue papers
1as first author
2since 2021 · last 2023
0000-0002-0445-9543ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 4 · 1 first-author · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
4 papers |
Hardware reliability and fault tolerance · 43% Integrated circuit design · 30% Hardware accelerators and domain-specific architectures · 23% |
Topics — the 6 heaviest of 7, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Hardware reliability and fault tolerance
radiation effects |
0.7 | 2 | 2019 | Total ionizing dose effects on graphene-based charge-trapping memory · Sci. China Inf. Sci. 2019 Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor · Sci. China Inf. Sci. 2017 |
Hardware accelerators and domain-specific architectures
machine learning accelerator |
0.7 | 1 | 2023 | Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks · Sci. China Inf. Sci. 2023 |
Integrated circuit design › emerging device technologies
ferroelectric devices |
0.6 | 1 | 2022 | Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions · Sci. China Inf. Sci. 2022 |
Hardware reliability and fault tolerance › radiation effects
total ionizing dose effects |
0.6 | 2 | 2022 | Total ionizing dose effects on graphene-based charge-trapping memory · Sci. China Inf. Sci. 2019 Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions · Sci. China Inf. Sci. 2022 |
Integrated circuit design › emerging device technologies
emerging memory devices |
0.2 | 1 | 2023 | Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks · Sci. China Inf. Sci. 2023 |
Memory systems
non-volatile memory |
0.1 | 1 | 2019 | Total ionizing dose effects on graphene-based charge-trapping memory · Sci. China Inf. Sci. 2019 |
Methods — techniques the papers use, named apart from their topics
material characterization · 0.6graphene-based charge-trapping memory · 0.4
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2023 | Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks
Kunran Xu, Jie Yu 0027, Yannan Xu, Yaxin Ding, Shuxian Lv, Zhiwei Dang, Tiancheng Gong |
Sci. China Inf. Sci. | 4 |
| 2022 | Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions
Xueqin Yang, Yannan Xu, Jinshun Bi, Linjie Fan, Lanlong Ji, Gaobo Xu |
Sci. China Inf. Sci. | 2 |
| 2019 | Total ionizing dose effects on graphene-based charge-trapping memory
Jinshun Bi, Sandip Majumdar, Bo Li 0051, Jing Liu 0035, Yannan Xu, Ming Liu 0022 |
Sci. China Inf. Sci. | 6 |
| 2017 | Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor
Yannan Xu, Jinshun Bi, Gaobo Xu, Bo Li 0051, Ming Liu 0022 |
Sci. China Inf. Sci. | 1 |