Demo Data from VLDB 2026 / reviewers in the wild / expert
Shaoyan Di
dblp:219/8636
· DBLP profile ↗
2ranked-venue papers
1as first author
0since 2021 · last 2019
0009-0000-6941-1922ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 1 first-author
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 100% |
Topics — the 5 heaviest of 5, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor device modeling
drift-diffusion model |
0.4 | 1 | 2019 | Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime · Sci. China Inf. Sci. 2019 |
Integrated circuit design
semiconductor device modeling |
0.4 | 1 | 2019 | Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime · Sci. China Inf. Sci. 2019 |
Integrated circuit design › analog and mixed-signal circuits
device modeling |
0.3 | 1 | 2018 | Calibration of drift-diffusion model in quasi-ballistic transport region for FinFETs · Sci. China Inf. Sci. 2018 |
Integrated circuit design › semiconductor devices › field-effect transistor
MOSFET |
0.1 | 1 | 2019 | Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime · Sci. China Inf. Sci. 2019 |
Integrated circuit design › semiconductor devices › multi-gate devices
FinFET |
0.1 | 1 | 2018 | Calibration of drift-diffusion model in quasi-ballistic transport region for FinFETs · Sci. China Inf. Sci. 2018 |
Methods — techniques the papers use, named apart from their topics
quasi-ballistic transport · 0.4drift-diffusion calibration · 0.4drift-diffusion model · 0.3calibration · 0.3
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2019 | Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime
Shaoyan Di, Pengying Chang, Tiao Lu, Gang Du |
Sci. China Inf. Sci. | 1 |
| 2018 | Calibration of drift-diffusion model in quasi-ballistic transport region for FinFETs
Shaoyan Di, Longxiang Yin, Gang Du |
Sci. China Inf. Sci. | 2 |