Spin-transfer torque magnetic random access memory (STT-MRAM) is a promising alternative to existing memory technologies. However, STT-MRAM faces reliability challenges, primarily due to stochastic switching, process variation, and manufacturing defects. These reliability challenges become even worse due to interconnect parasitic resistive-capacitive effects, potentially compromising the reliability of memory cells located far from the write driver. This can severely impair the manu-facturing yield and large-scale industrial adoption. Toaddressthis, we propose an interconnect-aware error correction coding (InterA-ECC), which provides non-uniform error correction to a different zone of the memory subarray. The proposed InterA-ECC strategy selectively applies robust error-correction code (ECC) to specific rows within the subarray rather than uniformly across all rows, reducing ECC parity bits while enhancing bit error rate resiliency in the most vulnerable memory zone.

Spin-transfer torque magnetic random access memory (STT-MRAM) has emerged as a promising alternative to conventional CMOS memory technologies for on-chip cache replacement. Due to its superior access speeds, high endurance, and scalability, it is being extensively considered a promising candidate for last-level cache replacement. This technology has reached considerable industrial maturity, with several foundries now offering this emerging technology. Despite its advantages, STT-MRAM faces reliability challenges, primarily due to its asymmetric error characteristics during write and read operations, where the likelihood of a bit transitioning from$1\rightarrow 0$differs from that of$0\rightarrow 1$. Conventional Error Correcting Codes (ECCs) do not account for such asymmetry between these bit-flip types and fall short of providing balanced error correction. This article introduces an efficient asymmetric and adaptive error correction in STT-MRAM based on the Hamming weight of data bits that operates with negligible overhead alongside a standard ECC framework. Our simulation findings indicate that the proposed technique offers substantial enhancement in reliability, measured by a cache word/block error rate, tested across the last level cache data for various SPEC CPU2017 benchmarks. This enhancement in reliability is achieved without inserting excessive memory and hardware overhead, and without impacting system performance, presenting a compelling case for enhancing the operational reliability of STT-MRAM.

It is envisaged that spintronic logic devices will ultimately be utilized in hybrid CMOS-spintronic systems where signal interconversion between magnetic and electrical domains via transducers takes place. This underscores the vital role of transducers in influencing the overall performance of such hybrid systems. This paper addresses the question: Can spintronic circuits based on Magnetic Tunnel Junction (MTJ) transducers outperform their state-of-the-art CMOS counterparts? To this end, we use the EPFL (École Polytechnique Fédérale de Lausanne) combinational benchmark sets, synthesize them in 7 nm CMOS and in MTJ transducer based spintronic technologies, and compare the two implementation methods in terms of Energy-Delay-Product (EDP). To fully utilize the technologies’ potential, CMOS and spintronic implementations are built upon standard Boolean and Majority Gates, respectively. For the spintronic circuits, we assumed that domain conversion (electric/magnetic to magnetic/electric) is performed by means of MTJs and the computation is accomplished by domain wall (DW)-based majority gates, and considered two EDP estimation scenarios: (i) Uniform Benchmarking, which ignores the circuit’s internal structure and only includes domain transducers’ power and delay contributions into the calculations, and (ii) Majority-Inverter-Graph Benchmarking, which also embeds the circuit structure, the associated critical path delay and energy consumption by DW propagation. Our results indicate that, for the uniform case, the spintronic route is better suited for the implementation of complex circuits with few inputs and outputs. On the other hand, when the circuit structure is also considered via majority and inverter synthesis, our analysis clearly indicates that in order to match and eventually outperform CMOS performance, MTJ transducers’ efficiency has to be improved by 3-4 orders of magnitude. While it is clear that for the time being the MTJ-based-spintronic way cannot compete with CMOS, further technological transducer developments may tip the balance, which, when combined with information non-volatility, may make spintronic implementation for certain applications that require a large number of calculations and have a rather limited amount of interaction with the environment.

Spin-transfer torque magnetic random access memory (STT-MRAM) is a promising alternative to existing CMOS memory technologies due to its non-volatility, fast read access, and scalability potential. This has reached the level of industrial maturity as several foundries now offer this technology. However, it is sensitive to various failure mechanisms, such as manufacturing defects in both CMOS and magnetic layers, temperature variation, repetitive writes, and oxide breakdown, which can cause early cell failure leading to hard errors. This can severely impair the manufacturing yield and its large-scale industrial adoption. To ensure high manufacturing yield and infield reliability, we propose a new block error correction pointer (BECP) as a hard error correction technique for STT-MRAM. The proposed method divides large word lengths into smaller sub-blocks and assigns a specific base value per sub-block to determine the offset location of the hard error. This allows storing only the offset value instead of the absolute address of the hard error for each sub-block. The results depict that the proposed method is storage efficient and has low decoding complexity compared to the existing state-of-the-art methods. We incorporate experimental measurement data obtained from manufactured STT-MRAM chips at different die locations to get the hard error distribution. The proposed method aligns well with our specific STT-MRAM error distribution measurements.

Guaranteeing high-quality test solutions for Spin-Transfer Torque Magnetic RAM (STT-MRAM) is a must to speed up its high-volume production. A high test quality requires maximizing the fault coverage. Detecting permanent faults is relatively simple compared to intermittent faults; the latter are faults (caused by non-environmental conditions) that appear and disappear as a function of time, and are therefore hard to detect. Testing for such faults in STT-MRAMs is even worse considering the Magnetic Tunneling Junction inherent property ‘intrinsic switching stochasticity’, which results in inevitable random write errors. This paper presents a novel Design-for-Testability (DFT) scheme for detecting intermittent faults in STT-MRAMs; it is based on monitoring the write current. The strength of the write current is inversely correlated to the write error rate; when the write current is smaller than the specification, the device is considered faulty. A reduction in the write current can be caused by any defect in the write path of the memory (e.g., interconnects and contacts). Simulation results based on industrial design show that applying DFT yields a superior coverage of intermittent faults compared to functional test methods, such as march tests.

The Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is on its way to commercialization. However, the development of high-quality test solutions for STT-MRAMs poses challenges due to the specific working mechanism of the core element of the STT-MRAM bit cells, i.e., the magnetic tunnel junction (MTJ), which involves both a magnetic field and spin-transfer torque. This property can introduce defects unique to MTJs which may escape from test programs that consist solely of functional write and read operations, like march tests. Hence, it is important to develop test solutions that go beyond conventional march tests. This paper explores the effect of applying an external magnetic field (Hext) on the test quality and test time of STT-MRAMs, which could be achieved by integrating one or more magnets in the Automated Test Equipment (ATE) setup. A framework for these so-called Hext-assisted tests is presented and implemented for all known conventional and unique defects. The paper demonstrates that the Hext-assisted tests offer superior coverage and/or lower test time compared to regular functional tests, like march tests. The effectiveness of these tests are validated through silicon measurements.

Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) are on their way to commercialization. However, obtaining high-quality test and diagnosis solutions for STT-MRAMs is challenging due to the existence of unique defects in Magnetic Tunneling Junctions (MTJs). Recently, the Device-Aware Test (DA-Test) method has been put forward as an effective approach mainly for detecting unique defecting STT-MRAMs. In this study, we propose a further advancement based on the DA-Test framework, introducing the Device-Aware Diagnosis (DA-Diagnosis) method. This method comprises two steps: a) defining distinctive features of each unique defect by characterization and physical analysis of defective MTJs, and b) utilizing march algorithms to extract distinctive features. The effectiveness of the proposed approach is validated in an industrial setting with real devices and data measurement.

The development of Spin-transfer torque magnetic RAM (STT-MRAM) mass production requires high-quality dedicated test solutions, for which understanding and modeling of manufacturing defects of the magnetic tunnel junction (MTJ) is crucial. This paper introduces and characterizes a new defect called Back-Hopping (BH); it also provides its fault models and test solutions. The BH defect causes MTJ state to oscillate during write operations, leading to write failures. The characterization of the defect is carried out based on manufactured MTJ devices. Due to the observed non-linear characteristics, the BH defect cannot be modelled with a linear resistance. Hence, device-aware defect modeling is applied by considering the intrinsic physical mechanisms; the model is then calibrated based on measurement data. Thereafter, the fault modeling and analysis is performed based on circuit-level simulations; new fault primitives/models are derived. These accurately describe the way the STT-MRAM behaves in the presence of BH defect. Finally, dedicated march test and a Design-for-Test solutions are proposed.

The development of Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) mass production requires high-quality test solutions. Accurate and appropriate fault modeling is crucial for the realization of such solutions. This paper targets fault modeling and test generation for all interconnect and contact defects in STT-MRAMs and shows that using the defect injection and circuit simulation for fault modeling without incorporating the impact of magnetic coupling will result in an incomplete set of fault models; hence, not obtaining accurate fault models. Magnetic coupling introduced by the stray field is an inherent property of STT-MRAMs and may foster the occurrence of additional memory faults. Not considering the magnetic coupling clearly will give rise to test escapes. The paper introduces a compact model for STT–MRAM that incorporates the intra- and inter-cell stray field, uses this model to derive the full set of fault models for interconnect and contact defects, and finally proposes an efficient test solution.

The STT-MRAM manufacturing process involves not only traditional CMOS process steps, but also the integration of magnetic tunnel junction (MTJ) devices, the data-storing elements. This paper demonstrates a paradigm shift in fault modeling for STT-MRAMs by performing defect modeling and fault analysis for MTJ pinhole defects which are seen as a key type of STT-MRAM manufacturing defects. A Verilog-A compact model for defect-free MTJ devices is built and calibrated with electrical measurements on actual MTJ wafers. MTJs with a pinhole defect are extensively characterized, both during manufacturing test (t=0) and in the field (t>0), and the data is used to extend our defect-free MTJ compact model to include parameterized pinhole defects. The model is then used to perform single-cell static fault analysis and this shows not only what kind of faults can occur in an STT-MRAM, but also that the conventional fault modeling approach based on linear resistors cannot catch such behavior.