Abstract The generation, processing, and measurement of microwave signals using optoelectronic technology on compact chips represent a significant trend in the evolution of microwave photonics (MWP). Among various platforms, silicon photonics has emerged as a leading choice, primarily due to its compatibility with established complementary metal-oxide-semiconductor (CMOS) processes. This compatibility enables the complete integration of high-performance radio frequency (RF) links while addressing key challenges such as size, power consumption, cost, and reliability. In this article, we review recent advancements in silicon-integrated microwave photonics, focusing on the developments of device-level integration and system-level applications. At the device level, we highlight critical innovations in silicon-based passive and active components towards MWP concerns, including ultralow-loss waveguides, high-fitness micro rings, large-bandwidth/high-linearity electro-optic modulators, hybrid/heterogeneous integrated lasers and amplifiers on silicon, frequency combs, and more. These breakthroughs form the basic foundation for advancing MWP system-level implementation. At the system-level applications, we concentrate on integrated MWP systems with diverse functionalities on silicon chips, including microwave signal generation, processing, programmable circuits, and measurement systems. Finally, we discuss current challenges and provide insights into the future of silicon-integrated MWP.

Abstract Over the past 70 years, the semiconductor industry has undergone transformative changes, largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

A 800G integrated silicon-photonic transmitter is presented, including a 16-channel photonic integrated chip (PIC) and two electrical chiplets (EICs) that are realized based on an arrayed travelling wave dual-drive Mach-Zehnder modulator (MZM) and two 8-channel CMOS drivers. The proposed multi-channel PIC is fabricated on a high-resistance silicon-on-insulator (SOI) wafer with a 220 nm thick silicon layer and a$\mathbf{2}\ \boldsymbol{\mu} \mathbf{m}$thick buried oxide (BOX) using the foundry-ready CMOS process, while the drivers are implemented in a standard$\mathbf{65}\mathbf{nm}$CMOS process. The driver employs a combination of distributed architecture, 2-tap feedforward equalization (FFE) and push-pull output stage, experimentally exhibiting an averaged bandwidth higher than 28.5GHz and a differential swing of 4.0Vpp on$\mathbf{50}\mathbf{\Omega}$load, respectively. The 50Gb/s electrical eye-diagram is measured with 1.41ps rms-jitter, while the optical extinction ratio (ER) exceeds 3.0dB with 5.35pJ/bit power efficiency.

Silicon photonics is a promising technology to address the demand for dense and integrated next-generation optical interconnections due to its complementary-metal-oxide-semiconductor (CMOS) compatibility. However, one of the key building blocks, the silicon modulator, suffers from several drawbacks, including a limited bandwidth, a relatively large footprint, and high power consumption. The graphene-based silicon modulator, which benefits from the excellent optical properties of the two-dimensional graphene material with its unique band structure, has significantly advanced the above critical figures of merit. In this work, we review the state-of-the-art graphene-based silicon modulators operating in various mechanisms, i.e., thermal-optical, electro-optical, and plasmonic. It is shown that graphene-based silicon modulators possess the potential to have satisfactory characteristics in intra- and inter-chip connections.