Demo Data from VLDB 2026 / reviewers in the wild / expert
Sami Alghamdi
dblp:233/9410
· DBLP profile ↗
2ranked-venue papers
0as first author
2since 2021 · last 2025
0000-0003-0465-6675ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 100% |
Topics — the 5 heaviest of 6, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
analog and mixed-signal circuits |
0.9 | 1 | 2025 | 24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer · Sci. China Inf. Sci. 2025 |
Integrated circuit design
power semiconductor devices |
0.9 | 1 | 2025 | 1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations · Sci. China Inf. Sci. 2025 |
Integrated circuit design › semiconductor devices › diode
schottky barrier diodes |
0.9 | 1 | 2025 | 1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations · Sci. China Inf. Sci. 2025 |
Integrated circuit design › semiconductor devices
semiconductor device design |
0.9 | 1 | 2025 | 24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer · Sci. China Inf. Sci. 2025 |
Integrated circuit design › emerging device technologies
gallium oxide devices |
0.3 | 1 | 2025 | 1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations · Sci. China Inf. Sci. 2025 |
Methods — techniques the papers use, named apart from their topics
device figure-of-merit characterization · 0.9
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2025 | 1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations
Yitao Feng, Sami Alghamdi, Guotao Tian, Saud Wasly, Yue Hao 0001, Jincheng Zhang 0001 |
Sci. China Inf. Sci. | 3 |
| 2025 | 24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer
Sami Alghamdi, Yue Hao 0001 |
Sci. China Inf. Sci. | 3 |