Hyperdimensional computing (HDC) is an emerging paradigm that employs hypervectors (HV s) to emulate cognitive tasks. In HDC, the most time-consuming and power-hungry process is encoding, the first step that maps raw data into HV s. There have been non-volatile memory (NVM) based computing-in-memory (CiM) HDC encoding designs, which exploit the intrinsic HDC characteristics of high parallelism, massive data, and robustness. These NVM-based CiMs have shown great potential in reducing encoding time and power consumption. Among them, the ferroelectric field-effect transistor (FeFET) based designs show ultra-high energy efficiency. However, existing FeFET-based HDC encoding designs face the challenges of energy -consuming current-mode addition, inefficient HV storage, limited endurance, and single encoding method support. These challenges limit the energy efficiency, lifetime, and versatility of the designs. This work proposes an energy-efficient charge-domain FeFET-based in-memory HDC encoder, i.e., CafeHD, with extended lifetime, good versatility, and comparable accuracy. Area-efficient charge-domain computing is proposed in HDC encoding for the first time, which enables CafeHD with ultra-low power and high scalability. An HV merging technique is explored to improve the performance. A low-cost partial MAJ interface is also proposed to reduce writes. Besides, CafeHD also supports two widely used encoding methods. Results show that CafeHD on average achieves 10.9×/12.7×/3.5× speedup and 103.3×/21.9×/6.3× energy effi-ciency with ~84 % write times reduction and similar accuracy compared with the state-of-the-art ReRAM/PCMlFeFET-based CiM design for HDC encoding, respectively.

Tabular data are a widely used format in data science, and tree-based Machine Learning (ML) models are powerful tools and outperform Deep Neural Network (DNN) with higher accuracy for tasks on tabular data. However, computing multiple trees on massive tabular data via conventional von Neumann architectures suffers from irregular memory accesses. Prior work utilizes Analog Content Addressable Memories (ACAMs) to gain great speedup, but the analog matching method is vulnerable to device and voltage variations, and the limited density of 2D memory makes frequent data movement still inevitable for large-scale tabular data.

Multi-level cell (MLC) NVM-based CiM has become a promising candidate in computing-in-memory (CiM) designs because of its non-volatility, high cell density, and improving compatibility with the CMOS process. However, most MLC CiM faces the challenges of non-ideal device limitations, including the low on/off ratio, large device-to-device variations, and read disturbances, which limit the computing accuracy, reliability, and throughput performance. This work proposes Victor, a variation-resilient approach using cell-clustered charge-domain computing for high-density and high-throughput MLC CiM. A cell-clustered-computing with local recovery unit (LRU) design methodology is proposed to improve matrix-vector-multiplication (MVM) reliability and throughput. To showcase the capability of Victor, 2b-4b MLC Resistive RAM (RRAM) is taken as an example for design and evaluation. Results show that Victor reaches 3.56x energy efficiency, 4x variation tolerance compared with the prior ratio-based MLC CiM. In addition, the throughput is improved by 3.1x with less than 1% DNN accuracy loss. Moreover, a dynamic boundary adaption approach is proposed to restore the accuracy loss of state drifting, which in return reduces the energy and latency overhead by 100x and 1.25x, respectively, compared with the conventional write-and-verify approach.

The concept of multi-level cell (MLC) enabled by emerging memory device technologies has introduced new opportunities for memory density improvement, including in the cache scenarios with some high-endurance technologies. However, the access latency of different bits within an MLC memory cell is inherently nonuniform, which raises challenges in utilizing the MLC technology for low-latency cache. To exploit the access performance of the MLC cache, the key is identifying the hot data blocks and mapping them to fast MLC bits. Prior works perform the hot/cold data management based on block-wise access patterns with considerable hardware overheads. Inspired by the memory hierarchy, this work proposes a new concept of in-cell hierarchical victim cache as embedded memory and systematically presents the cache architecture, operating mechanism, design space exploration, optimizations, and evaluations. By utilizing the slow bits as the victim buffer, lower hit latency with low implementation overheads is achieved. Based on the in-cell victim cache, two optimization techniques, namely selective victim retrieval, and victim-bypassing write (VBW) are proposed, to further improve performance and prolong cache endurance, respectively. Evaluation results show that the MLC victim cache significantly improves the average system performance by 20.2% over conventional MLC cache and achieves 98% performance of the upper bound implemented with 2x memory cells SLC. The proposed VBW also reduces energy consumption by 21% and improves lifetime by over 80%, showing a new promising dimension for future MLC cache design.

Bitwise logic-in-memory (BLiM) is a promising approach to efficient computing in data-intensive applications by reducing data movement between memory and processing units. However, existing BLiM techniques have challenges towards higher energy efficiency and speed: (i) DC power in computing and result sensing is significant in most existing RRAM and MRAM based BLiM solutions; (ii) before the computation result could be stored back to the same memory array, existing BLiM has to sense the result first, at the cost of extra power and latency due to the sense amplifiers (SAs). Targeting at higher energy efficiency and speed, this work proposes a new BLiM approach in 2-transistor/ cell (2T/C) and 3T/C topologies based on ferroelectric field-effect transistors (FeFETs), supporting a variety of computing functions. For the first time, this new approach supports SA-free direct write-back, and consumes no static power for computing and sensing with proposed fully dynamic computing and sensing schemes. Another highlight is that this work further minimizes the dynamic power by (i) reducing the chance of bitline charging activities and (ii) recycling the bitline charge in sensing multi-operand operations. Compared with prior BLiM methods based on nonvolatile memories, evaluation shows 3.0x–100x latency and 1.3x–200x energy improvement for typical in- memory XOR operation, which further leads to 3.0x–58x and 3.2x–78x savings of latency and energy, respectively, for the application of advanced-encryption standard (AES).

In normally-off instant-on applications, power-gating of the embedded memory is an effective way for higher power efficiency by preventing long-standby-time leakage energy. Recent efforts of nonvolatile SRAM (nvSRAM) design with in-cell NVM element backup provide an efficient way for both normal-mode computing and off-mode backup and restore (B&R) operations. For these efforts, circuit innovations are required to achieve optimal balance between B&R energy and area overheads. In this paper, we report a novel 8T/cell FeFET-based nvSRAM design that outperforms prior FeFET-based designs with higher density, while still maintaining the advantage of only sub-fJ energy for each B&R operation, 363x lower than the existing RRAM-based nvSRAM design. Compared with prior FeFET-based designs, this design reduces the B&R transistor count per cell from 4 to only 2, which leads to a significant total area overhead reduction of 11%.

With the down-scaling of CMOS technology, the design complexity of very large-scale integrated is increasing. Although the application of machine learning (ML) techniques in electronic design automation (EDA) can trace its history back to the 1990s, the recent breakthrough of ML and the increasing complexity of EDA tasks have aroused more interest in incorporating ML to solve EDA tasks. In this article, we present a comprehensive review of existing ML for EDA studies, organized following the EDA hierarchy.

Ferroelectric FETs (FeFETs) have emerged as a promising multi-level/cell (MLC) nonvolatile memory (NVM) candidate for low-power applications. This originates from the advantages of both efficient memory access and intrinsic device-level in-memory computing flexibilities. However, there still exist challenges for FeFET MLC NVM: (i) high power consumption in read operations due to high-gain requirement for sense amplifiers during sensing, and (ii) high latency and energy consumption in write operations with conventional recursive program-and-verify. Targeting at lower power, less latency, and higher density, this work investigates and optimizes the read and write approaches to MLC FeFET NVM design: (i) Adaptive FeFET memory State Mapping (ASM) between the FeFET drain-source current and the digital states to increase the sensing margin; (ii) Adaptive FeFET Gate Biasing (AGB) read methods that adopt the optimized FeFET gate voltage to boost the sensible dynamic range and to store more levels of states per cell; (iii) Adaptive Prediction-based Direct (APD) write methods that minimize the program-andverify activities. Evaluations show significant latency and energy improvement. Furthermore, the number of sensible levels of states per cell is also increased with an enhanced dynamic sensing range and an enhanced sensing margin.

This paper proposes low-power design of embedded dynamic random-access memory (eDRAM) using emerging nanoelectromechanical (NEM) relay devices. The motivation of this work is to reduce the standby refresh power consumption through the improvement of retention time of eDRAM cells. In this paper, it is revealed that the tunable beyond-CMOS characteristics of emerging NEM relay devices, especially the ultra-high OFF-state drain-source resistance, open up new opportunities with device-circuit co-design. In addition, the pull- in and pull-out threshold voltages are tilled to fit the operating mechanisms of eDRAM, so as to support low-voltage operations along with long retention time. Excitingly, when low-gate-leakage thick-gate transistors are used together, the proposed NEM-relay- based eDRAM exhibits so significant retention time improvement that it behaves almost "nonvolatile". Even if using thin-gate transistors in a 130nm CMOS, the evaluation of the proposed eDRAM shows up to 63x and 127x retention time improvement at 1.0V and 1.4V supply, respectively. Detailed performance benchmarking analysis, along with the practical CMOS- compatible NEM relay model, the eDRAM design and optimization considerations, is included in this paper.

Compute-in-memory (CiM) is a promising method for mitigating the memory wall problem in data-intensive applications. The proposed bitwise logic-in-memory (BLiM) is targeted at data intensive applications, such as database, data encryption. This work proposes a low-power BLiM approach using the emerging nonvolatile ferroelectric FETs with direct write-back and data-adaptive dynamic sensing interface. Apart from general-purpose random-access memory, it also supports BLiM operations such as copy, not, nand, xor, and full adder (FA). The novel features of the proposed architecture include: (i) direct result-write-back based on the remnant bitline BLiM charge that avoids bitline sensing and charging operations; (ii) a fully dynamic sensing interface that needs no static reference current, but adopts data-adaptive voltage references for certain multi-operand operations, and (iii) selective bitline charging from wordline (instead of pre-charging all bitlines) to save power and also enable direct write-back. Detailed BLiM operations and benchmarking against conventional approaches show the promise of low-power computing with the FeFET-based circuit techniques.

Making embedded memory symmetric provides the capability of memory access in both rows and columns, which brings new opportunities of significant energy and time savings if only a portion of data in the words need to be accessed. This work investigates the use of ferroelectric field-effect transistors (FeFETs), an emerging nonvolatile, low-power, deeply-scalable, CMOS-compatible transistor technology, and proposes a new 3-transistor/cell symmetric nonvolatile memory (SymNVM). With ~1.67x higher density as compared with the prior FeFET design, significant benefits of energy and latency improvement have been achieved, as evaluated and discussed in depth in this paper.