Demo Data from VLDB 2026 / reviewers in the wild / expert
Qianlan Hu
dblp:258/3383
· DBLP profile ↗
2ranked-venue papers
0as first author
2since 2021 · last 2025
0000-0002-5498-4135ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Memory systems · 64% Integrated circuit design · 36% |
Topics — the 3 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Memory systems › DRAM › DRAM architecture
3D-stacked DRAM |
0.9 | 1 | 2025 | Scaled 3D-stacked 2T0C DRAM based on indium-tin-oxide transistors with long data retention and fast write speed of 10 ns · Sci. China Inf. Sci. 2025 |
Memory systems
DRAM |
0.9 | 1 | 2025 | Scaled 3D-stacked 2T0C DRAM based on indium-tin-oxide transistors with long data retention and fast write speed of 10 ns · Sci. China Inf. Sci. 2025 |
Memory systems
non-volatile memory |
0.3 | 1 | 2025 | Improvement with low operation voltage in ultrathin La-doped Hf0.5Zr0.5O2 ferroelectric capacitors · Sci. China Inf. Sci. 2025 |
Methods — techniques the papers use, named apart from their topics
la doping · 0.9hf0.5zr0.5o2 · 0.9
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2025 | Improvement with low operation voltage in ultrathin La-doped Hf0.5Zr0.5O2 ferroelectric capacitors
Shiwei Yan, Tianyue Fu, Honggang Liu, Qianlan Hu, Yanqing Wu |
Sci. China Inf. Sci. | 6 |
| 2025 | Scaled 3D-stacked 2T0C DRAM based on indium-tin-oxide transistors with long data retention and fast write speed of 10 ns
Shenwu Zhu, Qianlan Hu, Chengru Gu, Shiwei Yan, Aocheng Qiu, Yanqing Wu |
Sci. China Inf. Sci. | 2 |