VLDB 2026 Research / reviewers in the wild / expert
Shenglei Zhao
dblp:284/9361
· DBLP profile ↗
5ranked-venue papers
1as first author
5since 2021 · last 2025
0000-0002-1406-1088ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 4 · 4 since 2021Artificial intelligence and machine learning · 1 · 1 first-author · 1 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
4 papers |
Integrated circuit design · 81% Hardware reliability and fault tolerance · 19% |
Topics — the 7 heaviest of 8, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
power semiconductor devices |
1.6 | 4 | 2023 | High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation · Sci. China Inf. Sci. 2023 Unidirectional p-GaN gate HEMT with composite source-drain field plates · Sci. China Inf. Sci. 2022 Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate · Sci. China Inf. Sci. 2022 |
Integrated circuit design › semiconductor devices
GaN HEMT |
1.4 | 3 | 2023 | High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation · Sci. China Inf. Sci. 2023 Unidirectional p-GaN gate HEMT with composite source-drain field plates · Sci. China Inf. Sci. 2022 Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs · Sci. China Inf. Sci. 2022 |
Integrated circuit design › semiconductor devices
device design |
0.7 | 1 | 2023 | High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation · Sci. China Inf. Sci. 2023 |
Integrated circuit design
analog and mixed-signal circuits |
0.6 | 1 | 2022 | Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate · Sci. China Inf. Sci. 2022 |
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor |
0.6 | 1 | 2022 | Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate · Sci. China Inf. Sci. 2022 |
Hardware reliability and fault tolerance
radiation effects |
0.6 | 1 | 2022 | Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs · Sci. China Inf. Sci. 2022 |
Hardware reliability and fault tolerance › radiation effects
single event effects |
0.6 | 1 | 2022 | Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs · Sci. China Inf. Sci. 2022 |
Methods — techniques the papers use, named apart from their topics
reverse-blocking design · 0.6p-gan gate · 0.6heavy ion irradiation testing · 0.6field plate · 0.6drain field plate · 0.6
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2025 | Rock burst early warning utilizing acoustic emission and electromagnetic radiation adaptive noise reduction and multi-image feature fusion: a case study
Shenglei Zhao, Enyuan Wang, Zhonghui Li, Jiankun Xu |
Eng. Appl. Artif. Intell. | 1 |
| 2023 | High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation
Yutong Fan, Ren Huang, Shenglei Zhao |
Sci. China Inf. Sci. | 8 |
| 2022 | Unidirectional p-GaN gate HEMT with composite source-drain field plates
Haiyong Wang, Shenglei Zhao, Yuanhao He, Jiabo Chen, Xuefeng Zheng, Chunfu Zhang, Jincheng Zhang 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 3 |
| 2022 | Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs
Yinhe Wu, Jincheng Zhang 0001, Shenglei Zhao, Zhaoxi Wu, Zhongxu Wang, Bo Mei, Dujun Zhao, Yue Hao 0001 |
Sci. China Inf. Sci. | 3 |
| 2022 | Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate
Dujun Zhao, Zhaoxi Wu, Bo Mei, Zhongxu Wang, Yinhe Wu, Shenglei Zhao, Jincheng Zhang 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 12 |