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Probir K. Bondyopadhyay

dblp:314/5259 · DBLP profile ↗
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6ranked-venue papers
6as first author
0since 2021 · last 1998
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 6 · 6 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
3 papers
Integrated circuit design · 100%
Computer graphics and multimedia
1 paper
Audio and music processing · 100%
Theoretical computer science
1 paper
Algorithms and data structures · 100%

Topics — the 5 heaviest of 5, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › semiconductor devices › bipolar transistor
bipolar transistor design
0.021998
W=Shockley, the transistor pioneer-portrait of an inventive genius · Proc. IEEE 1998
In the beginning [junction transistor] · Proc. IEEE 1998
Integrated circuit design › semiconductor devices
semiconductor device design
0.021998
W=Shockley, the transistor pioneer-portrait of an inventive genius · Proc. IEEE 1998
In the beginning [junction transistor] · Proc. IEEE 1998
Integrated circuit design
semiconductor technology
0.011998
Moore's law governs the silicon revolution · Proc. IEEE 1998
Audio and music processing
adaptive filtering
0.011988
Application of running Hartley transform in adaptive digital filtering · Proc. IEEE 1988
Algorithms and data structures › linear algebra › linear algebra algorithms
fast transforms
0.011988
Application of running Hartley transform in adaptive digital filtering · Proc. IEEE 1988

Methods — techniques the papers use, named apart from their topics

historical analysis · 0.1patent analysis · 0.0LMS algorithm · 0.0
YearPublicationVenuePosition
1998 In the beginning [junction transistor]
abstract
The junction transistor, technologically the most important solid-state device, invented theoretically by W.B. Shockley on January 23, 1948, brought about the semiconductor revolution. That invention was triggered by the experimental discovery of the point-contact transistor by W. Brattain and J. Bardeen 38 days earlier. Bardeen's notebook entries at Bell Telephone Laboratories for the crucial 100-day period November 21, 1947-February 29, 1948 have been examined to ascertain why this winner of two Nobel Prizes in physics could not invent the junction transistor. It was found that the boundary between the thin p-type inversion layer and the n-type bulk germanium semiconductor in their original point-contact transistor discovery was characterized as a "high resistance boundary" in macroscopic electrical engineering terms by Bardeen, the electrical engineer turned mathematical physicist. Pages from Shockley's notebook are reproduced in full to show what exactly he was thinking on December 16, 1947, the day the point-contact transistor was experimentally discovered by Brattain and Bardeen. The origin of U.S. Patent 2524035 has been traced to the Bell Telephone Laboratories notebook pages of its inventors and examined. It is shown that this patent could not be considered as the first patent describing Shockley's revolutionary theoretical invention of the minority carrier injection concept underlying bipolar transistor action.
Probir K. Bondyopadhyay
Proc. IEEE1
1998 Moore's law governs the silicon revolution
abstract
Moore's law is not about business forecasting. It is about commanding a revolution-the silicon revolution. In the history of human civilization, G.E. Moore is a singular man who has been commanding a major technological revolution with his own law for the past 32 years, On the occasion of the fiftieth anniversary of the invention of the transistor, it is instructive to look at the genesis and dynamics of this law defining the silicon age.
Probir K. Bondyopadhyay
Proc. IEEE1
1998 W=Shockley, the transistor pioneer-portrait of an inventive genius
abstract
A author looks at W=Shockley's (as was his trademark signature) patents to capture a glimpse of his creative mind. A list of 90 of Shockley's patents has been assembled, including those for the electron multiplier tube (with J. R. Pierce) in 1941, the Shockley diode, and the junction transistor, filed in June 1948 and granted in September 1951 by the US Patent Office.
Probir K. Bondyopadhyay
Proc. IEEE1
1998 Under the glare of a thousand suns-the pioneering works of Sir J.C. Bose
abstract
The origin of solid-state diode detectors of wireless waves has been traced to Sir J.C. Bose's pioneering millimeter-wave propagation experiments with certain polarizing crystals during 1896-1898. His seminal paper published in the January 1897 issue of the Proceedings of the Royal Society is reproduced in this issue to commemorate the one hundredth anniversary of the invention of the solid-state diode detector. The world's first patent on the solid-state diode detector invented by Bose and taken out in the United States, is also reproduced in full in this issue. Bose's further pioneering work with diode detectors, then known as "self-restoring coherers", is discussed in particular his invention of the "iron-mercury-iron contact with a telephone" detector that received the first transatlantic wireless signal of Marconi on December 12, 1901.
Probir K. Bondyopadhyay
Proc. IEEE1
1998 Sir J.C. Bose diode detector received Marconi's first transatlantic wireless signal of December 1901 (the "Italian Navy Coherer" Scandal Revisited)
abstract
The true origin of the "mercury coherer with a telephone" receiver that was used by G. Marconi to receive the first transatlantic wireless signal on December 12, 1901, has been investigated and determined. Incontrovertible evidence is presented to show that this novel wireless detection device was invented by Sir J.C. Bose of Presidency College, Calcutta, India. His epoch making work was communicated by Lord Rayleigh, F.R.S., to the Royal Society London, U.K., on March 6, 1899, and read at the Royal Society Meeting of Great Britain on April 27, 1899. Soon after, it was published in the Proceedings of the Royal Society. Twenty-one months after that disclosure (in February 1901, as the records indicate), Lieutenant L. Solari of the Royal Italian Navy, a childhood friend of G. Marconi's, experimented with this detector device and presented a trivially modified version to Marconi, who then applied for a British patent on the device. Surrounded by a scandal, this detection device, actually a semiconductor diode, is known to the outside world as the "Italian Navy Coherer". This scandal, first brought to light by Prof. A. Banti of Italy, has been critically analyzed and expertly presented in a time sequence of events by British historian V.J. Phillips but without discovering the true origin of the novel detector. In this paper, the scandal is revisited and the mystery of the device's true origin is solved, thus correcting the century-old misinformation on an epoch-making chapter in the history of semiconductor devices.
Probir K. Bondyopadhyay
Proc. IEEE1
1988 Application of running Hartley transform in adaptive digital filtering
abstract
A transform-domain adaptive digital filtering technique based on the concept of the running discrete Hartley transform (RDHT) is presented, with an application. This Hartley implementation is shown to have a speed advantage over the running FFT approach proposed and implemented recently. Possible implementation of the RDHT in various applications is outlined. Particular attention is given to implementation of the RDHT in the adaptive nonrecursive LMS algorithm.>
Probir K. Bondyopadhyay
Proc. IEEE1