The metalorganic chemical vapor deposition (MOCVD) process for electronic and photonic compound semiconductor materials and devices is reviewed. We begin with an introduction to the basic MOCVD chemical reaction process, gas delivery equipment, reaction chambers, and safety. Growth mechanisms, including hydrodynamics, boundary-layer issues, thermal effects, and pyrolysis reactions, are defined, and criteria for growth regimes, growth rate, and alloy composition are described. Material, structural, and dopant considerations, which are particularly important to optoelectronic devices, are presented. Last, a brief description of the selective area epitaxial growth process is presented.

The long-range vision of the Engineering Research Center for Compound Semiconductor Microelectronics (CCSM) is focused on a new generation of high-speed communications and data-processing technology which exploits the bandwidth, immunity to electromagnetic interference, and connectivity of optical interconnects. In order to realize this vision, it will be necessary to design, fabricate, and integrate high-performance electrical and optical devices in monolithic optoelectronic integrated circuits, OEIC's. The research programs of the CCSM are focused on the development of the engineering science and technology base for fabrication of OEIC's and their application in optical interconnect systems; the education of engineers in this field; and effective transfer of this technology to industry