Demo Data from VLDB 2026 / reviewers in the wild / expert
Raman G. Viswanathan
dblp:317/4954
· DBLP profile ↗
1ranked-venue papers
0as first author
0since 2021 · last 1997
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 1
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 4 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › emerging device technologies
alternative device structures |
0.0 | 1 | 1997 | CMOS scaling into the nanometer regime · Proc. IEEE 1997 |
Integrated circuit design › technology scaling
CMOS scaling |
0.0 | 1 | 1997 | CMOS scaling into the nanometer regime · Proc. IEEE 1997 |
Integrated circuit design › semiconductor devices
short-channel effects |
0.0 | 1 | 1997 | CMOS scaling into the nanometer regime · Proc. IEEE 1997 |
Integrated circuit design
low-power circuit design |
0.0 | 1 | 1997 | CMOS scaling into the nanometer regime · Proc. IEEE 1997 |
| Year | Publication | Venue | Position |
|---|---|---|---|
| 1997 | CMOS scaling into the nanometer regimeabstractStarting with a brief review on 0.1-/spl mu/m (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays. The last part of the paper discusses several alternative or unconventional device structures, including silicon-on-insulator (SOI), SiGe MOSFET's, low-temperature CMOS, and double-gate MOSFET's, which may lead to the outermost limits of silicon scaling. Yuan Taur, Douglas A. Buchanan, David J. Frank, Khalid E. Ismail, Shih-Hsien Lo, George A. Sai-Halasz, Raman G. Viswanathan, Hsing-Jen C. Wann, Shalom J. Wind, H.-S. Philip Wong |
Proc. IEEE | 8 |