Demo Data from VLDB 2026 / reviewers in the wild / expert
Yinhe Wu
dblp:319/3611
· DBLP profile ↗
2ranked-venue papers
1as first author
2since 2021 · last 2022
0000-0003-0035-5162ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 1 first-author · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 59% Hardware reliability and fault tolerance · 41% |
Topics — the 6 heaviest of 6, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
analog and mixed-signal circuits |
0.6 | 1 | 2022 | Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate · Sci. China Inf. Sci. 2022 |
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor |
0.6 | 1 | 2022 | Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate · Sci. China Inf. Sci. 2022 |
Hardware reliability and fault tolerance
radiation effects |
0.6 | 1 | 2022 | Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs · Sci. China Inf. Sci. 2022 |
Hardware reliability and fault tolerance › radiation effects
single event effects |
0.6 | 1 | 2022 | Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs · Sci. China Inf. Sci. 2022 |
Integrated circuit design
power semiconductor devices |
0.3 | 2 | 2022 | Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate · Sci. China Inf. Sci. 2022 Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs · Sci. China Inf. Sci. 2022 |
Integrated circuit design › semiconductor devices
GaN HEMT |
0.2 | 1 | 2022 | Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs · Sci. China Inf. Sci. 2022 |
Methods — techniques the papers use, named apart from their topics
reverse-blocking design · 0.6heavy ion irradiation testing · 0.6drain field plate · 0.6
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2022 | Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs
Yinhe Wu, Jincheng Zhang 0001, Shenglei Zhao, Zhaoxi Wu, Zhongxu Wang, Bo Mei, Dujun Zhao, Yue Hao 0001 |
Sci. China Inf. Sci. | 1 |
| 2022 | Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate
Dujun Zhao, Zhaoxi Wu, Bo Mei, Zhongxu Wang, Yinhe Wu, Shenglei Zhao, Jincheng Zhang 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 9 |