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G. I. Serhan

dblp:32/5370 · DBLP profile ↗
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1ranked-venue papers
1as first author
0since 2021 · last 1983
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 61% Electronic design automation · 39%

Topics — the 4 heaviest of 4, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
analog and mixed-signal circuits		 0.011983
A Simple Charge-Based Model for MOS Transistor Capacitances: A New Production Tool · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1983
Electronic design automation › circuit modeling
charge/capacitance model		 0.011983
A Simple Charge-Based Model for MOS Transistor Capacitances: A New Production Tool · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1983
Integrated circuit design › analog and mixed-signal circuits › device modeling
MOSFET modeling		 0.011983
A Simple Charge-Based Model for MOS Transistor Capacitances: A New Production Tool · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1983
Electronic design automation
circuit simulation		 0.011983
A Simple Charge-Based Model for MOS Transistor Capacitances: A New Production Tool · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1983

Methods — techniques the papers use, named apart from their topics

hyperbolic tangent function · 0.0charge conservation · 0.0
YearPublicationVenuePosition
1983 A Simple Charge-Based Model for MOS Transistor Capacitances: A New Production Tool
abstract
A new charge based MOS transistor model for capacitances which will conserve transient charges is introduced. The model is required to accurately simulate a certain class of dynamic circuits. This model features continuous charge formulation in all regions of operation: accumulation, cutoff, and strong inversion. Capacitances are continuous in all regions except on the strong inversion to cutoff border. The channel potential is approximated by novel and weighted functions of the drain and source potentials. A hyperbolic tangent function splits the channel charge in strong inversion between the source and drain. Charge conservation and accuracy of the model are demonstrated with some real examples.
G. I. Serhan, Swei-Yam Yu
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.1