Demo Data from VLDB 2026 / reviewers in the wild / expert
Zhongze Han
dblp:321/7324
· DBLP profile ↗
5ranked-venue papers
1as first author
5since 2021 · last 2026
0009-0004-2953-971XORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 2 since 2021Artificial intelligence and machine learning · 1 · 1 since 2021Systems, architecture and hardware · 1 · 1 since 2021Databases, data management, data science and information retrieval · 1 · 1 first-author · 1 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Memory systems · 60% Integrated circuit design · 40% |
Topics — the 4 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Memory systems › processing-in-memory
computing-in-memory |
1.5 | 2 | 2025 | An energy-efficient FeFET-based computing-in-memory macro using BEOL-integrated HZO ferroelectric capacitors · Sci. China Inf. Sci. 2025 A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory · Sci. China Inf. Sci. 2023 |
Integrated circuit design › emerging device technologies
ferroelectric field-effect transistor |
0.9 | 1 | 2025 | An energy-efficient FeFET-based computing-in-memory macro using BEOL-integrated HZO ferroelectric capacitors · Sci. China Inf. Sci. 2025 |
Integrated circuit design
low-power circuit design |
0.3 | 1 | 2025 | An energy-efficient FeFET-based computing-in-memory macro using BEOL-integrated HZO ferroelectric capacitors · Sci. China Inf. Sci. 2025 |
Memory systems › non-volatile memory
ferroelectric memory |
0.2 | 1 | 2023 | A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory · Sci. China Inf. Sci. 2023 |
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2026 | A BEOL Ferroelectric FET-based Computing Unit for Digital Computing-in-Memory
Junyu Zhu, Zexue Bian, Weizeng Li, Junzhe Shen, Hanghang Gao, Zhidao Zhou, Zhongze Han, Zhi Li 0062, Hongyang Hu, Chunmeng Dou |
ISCAS | 7 |
| 2026 | Simulation-to-real transfer learning for bearing fault diagnosis across working conditions: A hybrid approach combining physical modeling and data-driven techniques
Zhongze Han, Wenrui Xia, Qiuning Zhu, Hongqi Liu, Chaoyong Zhang |
Adv. Eng. Informatics | 1 |
| 2026 | Multi-source uncertainty guided semi-supervised multimodal tool wear recognition and prediction in extremely label-scarce scenarios
Saixiyalatu Bao, Zhongze Han, Linran Chen, Zichen Qiu, Chaoyong Zhang |
Expert Syst. Appl. | 2 |
| 2025 | An energy-efficient FeFET-based computing-in-memory macro using BEOL-integrated HZO ferroelectric capacitors
Weizeng Li, Zhidao Zhou, Linfang Wang, Junyu Zhu, Junzhe Shen, Hongyang Hu, Baihan Wang, Zhi Li 0062, Wang Ye, Zhongze Han, Hanghang Gao, Chunmeng Dou |
Sci. China Inf. Sci. | 10 |
| 2023 | A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory
Zhongze Han, Xuanzhi Liu, Qingting Ding, Jinhui Cheng, Ruixi Zhou, Hangbing Lv |
Sci. China Inf. Sci. | 4 |