Hot electron effects for n-channel submicron MOSFET devices have been analyzed on the basis of accurate physical models. The PISCES-Monte Carlo scheme is implemented to calculate impact ionization coefficients and predict accurately the generation of electron-hole pairs. The coupling scheme also provides important physical parameters and constants for developing substrate and gate current models as well as an improved mobility model, especially for high drain and gate bias conditions. The analytical models for impact ionization, thermionic emission and mobility are incorporated into the PISCES program and give accurate predictions compared with experimental results. These models predict the peak and saturated transconductance curves for the high drain voltage of LDD MOSFET devices.>

A multiwindow, multimethod device analysis algorithm that combines the advantages of efficient drift-diffusion simulators and accurate physical models using Monte Carlo methods is described. The PISCES 2-D device analysis program is used whenever the drift-diffusion model is valid. In situations where the drift-diffusion model breaks down, a window is opened in the part of the device where the hot-carrier effects are important. The Monte Carlo method in the McPOP program is then applied in the window. The simulation results obtained match well with the measured data and the full Monte Carlo results. The CPU time required has been reduced by a factor of 3 to 10 compared with the full Monte Carlo simulation. A parallel Monte Carlo algorithm has been used in the McPOP program. A 20-processor system speeds up the program by a factor of 18.5.>

Hot-electron transport effects in Schottky-barrier diodes grown by molecular-beam epitaxy (MBE) were investigated. Comparisons with experimental results for an Al-n/sup +/ GaAs diode shows that terminal currents obtained using the Monte Carlo (MC) method agree well with experiment and are higher than those of conventional analysis for the forward-bias condition. A much higher thermionic-emission velocity at the Schottky was obtained using the MC analysis compared to previously published results. It is argued that these hot-electron transport effects should be included when analyzing device physics and current-voltage characteristics of Schottky-barrier diodes grown by MBE.>