Demo Data from VLDB 2026 / reviewers in the wild / expert
Loi D. Nguyen
dblp:36/3371
· DBLP profile ↗
1ranked-venue papers
1as first author
0since 2021 · last 1992
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 1 · 1 first-author
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% | |
| Computer networks
1 paper |
Physical-layer communications · 100% |
Topics — the 3 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices
field-effect transistor |
0.0 | 1 | 1992 | Ultra-high speed modulation-doped field-effect transistors: a tutorial review · Proc. IEEE 1992 |
Physical-layer communications › RF circuit design
traveling wave tube amplifier |
0.0 | 1 | 1992 | Ultra-high speed modulation-doped field-effect transistors: a tutorial review · Proc. IEEE 1992 |
Integrated circuit design › digital circuit design
high-speed digital circuits |
0.0 | 1 | 1992 | Ultra-high speed modulation-doped field-effect transistors: a tutorial review · Proc. IEEE 1992 |
Methods — techniques the papers use, named apart from their topics
modulation doping · 0.0device scaling · 0.0
| Year | Publication | Venue | Position |
|---|---|---|---|
| 1992 | Ultra-high speed modulation-doped field-effect transistors: a tutorial reviewabstractA tutorial review on the modulation-doped field-effect transistor (MODFET) and its application to ultra-low-noise, medium-power, and ultra-wide-band traveling-wave amplifiers as well as ultra-high-speed digital logic circuits is presented. It is believed that with further advances in material growth and device scaling significant improvements in cutoff frequencies, switching speed, noise, and power will be achieved in the near future.> Loi D. Nguyen, Lawrence E. Larson, Umesh K. Mishra |
Proc. IEEE | 1 |