Anetch simulator that allows modeling of dry etch processes by means of rates, fitting functions, and models is presented. Isotropic etching by chemically active neutrals, sputtering by energetic ions, and anisotropic etching by ion-induced chemistry can be considered. The simulation of secondary effects such as redeposition and trenching as well as polymerization effects is possible. Some applications are presented to demonstrate the possibilities of the new program. This etch simulator is part of the process modeling program COMPOSITE, which is able to simulate the complete fabrication process of integrated circuits.>

A new two-dimensional process modeling program written in Fortran is described. For the first time, this program allows the simulation of all important processing steps occurring in typical sequences involved in the fabrication of integrated circuits such as doping, oxidation, lithography, etching, and layer deposition. The program possesses a modular structure to allow for easy changing and improvement of process models as well as of mathematical procedures. The program is menu driven to make it easy to use for non-experts and it is readily usable with different computer systems.