Demo Data from VLDB 2026 / reviewers in the wild / expert
Jianfeng Gao 0005
dblp:372/8550-5
· DBLP profile ↗
4ranked-venue papers
0as first author
4since 2021 · last 2023
—ORCID · conflict
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 3 · 3 since 2021Systems, architecture and hardware · 1 · 1 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
3 papers |
Memory systems · 35% Integrated circuit design · 27% Emerging computing paradigms · 22% |
Topics — the 5 heaviest of 7, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › emerging device technologies
ferroelectric devices |
0.7 | 1 | 2023 | Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes · Sci. China Inf. Sci. 2023 |
Emerging computing paradigms › spintronics
spintronic computing |
0.7 | 1 | 2023 | Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory · Sci. China Inf. Sci. 2023 |
Memory systems › non-volatile memory › magnetic random access memory
STT-MRAM |
0.7 | 1 | 2023 | Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory · Sci. China Inf. Sci. 2023 |
Memory systems
in-memory computing |
0.2 | 1 | 2023 | Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory · Sci. China Inf. Sci. 2023 |
Memory systems
non-volatile memory |
0.2 | 1 | 2023 | Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes · Sci. China Inf. Sci. 2023 |
Methods — techniques the papers use, named apart from their topics
transport modeling · 0.7electrical characterization · 0.7
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2023 | Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory
Kaihua Cao, Kun Zhang 0030, Kewen Shi, Zuolei Hao, Wenlong Cai, Ao Du, Jialiang Yin, Jianfeng Gao 0005, Weisheng Zhao 0001 |
Sci. China Inf. Sci. | 12 |
| 2023 | Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes
Tiancheng Gong, Zhaomeng Gao, Xiaoxin Xu, Jianfeng Gao 0005 |
Sci. China Inf. Sci. | 9 |
| 2023 | A Security-Enhanced, Charge-Pump-Free, ISO14443-A-/ISO10373-6-Compliant RFID Tag With 16.2-μW Embedded RRAM and Reconfigurable Strong PUFabstractRadio frequency identification technology (RFID) has empowered a wide variety of automation industries, such as logistics and freight transportation. To further promote RFID tags adoption, security, power consumption, and cost have always been issues of general concern. This article presents the first synergy of the RFID tag with embedded resistive RAM (RRAM) array and RRAM-based reconfigurable strong physical unclonable function (R-SPUF). The RRAM not only meets the mass storage and technology downscaling but also renders the ultralow-cost “1-cent RFID tag” more feasible. Moreover, the R-SPUF facilitates multiple initializations until a satisfactory distribution and has strong secure keys benefiting from its reconfigurability that improves both safety and reliability. The complete system operates at 13.56 MHz and is compliant with the ISO14443-A and ISO10373-6 (test) protocols. The RFID tag was fabricated on a 1.1-mm2 die based on the 0.18-$\mu \text{m}$CMOS process. Without resorting to the charge pumps for RRAM read–write operations, the total power consumption is as low as 52.3$\mu \text{W}$, of which the RRAM dissipates$16.2~\mu \text{W}$under a wireless power supply. Qirui Ren, Qiang Huo, Hao Wu 0084, Xiangqu Fu, Xiaoxin Xu, Jianfeng Gao 0005, Xiaojin Zhao, Dengyun Lei, Xinghua Wang 0005, Feng Zhang 0014, Yong Chen 0005, Pui-In Mak |
IEEE Trans. Very Large Scale Integr. Syst. | 11 |
| 2021 | Nano-scaled transistor reliability characterization at nano-second regime
Yiming Qu, Fanyu Liu, Jianfeng Gao 0005 |
Sci. China Inf. Sci. | 6 |