Demo Data from VLDB 2026 / reviewers in the wild / expert
Wenze Gao
dblp:377/8178
· DBLP profile ↗
2ranked-venue papers
0as first author
2since 2021 · last 2026
0000-0001-8719-0967ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 100% |
Topics — the 3 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor |
1.0 | 1 | 2026 | High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs · Sci. China Inf. Sci. 2026 |
Integrated circuit design › power semiconductor devices
high-power device |
1.0 | 1 | 2026 | High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs · Sci. China Inf. Sci. 2026 |
Integrated circuit design › semiconductor devices › GaN HEMT
AlGaN/GaN HEMT |
0.8 | 1 | 2024 | Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure · Sci. China Inf. Sci. 2024 |
Methods — techniques the papers use, named apart from their topics
graded-AlGaN/graded-InGaN/GaN HEMTs · 1.0electrostatic shielding · 0.8
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2026 | High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs
Ling Yang 0003, Chunzhou Shi, Bin Hou, Hao Lu 0012, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 10 |
| 2024 | Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure
Chunzhou Shi, Ling Yang 0003, Hao Lu 0012, Bin Hou, Xuerui Niu, Wenliang Liu 0003, Wenze Gao, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 10 |