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Christoph Wasshuber

dblp:38/764 · DBLP profile ↗
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2ranked-venue papers
2as first author
0since 2021 · last 2003
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 2 · 2 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
2 papers
Integrated circuit design · 80% Electronic design automation · 20%

Topics — the 4 heaviest of 4, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › emerging device technologies
single-electron transistor		 0.012003
Recent advances and future prospects in single-electronics · DAC 2003
Electronic design automation
circuit simulation		 0.011997
SIMON-A simulator for single-electron tunnel devices and circuits · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1997
Integrated circuit design › emerging device technologies
single-electron devices		 0.011997
SIMON-A simulator for single-electron tunnel devices and circuits · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1997
Integrated circuit design › semiconductor device fabrication
CMOS technology		 0.012003
Recent advances and future prospects in single-electronics · DAC 2003

Methods — techniques the papers use, named apart from their topics

monte carlo method · 0.0master equation approach · 0.0
YearPublicationVenuePosition
2003 Recent advances and future prospects in single-electronics
abstract
This paper introduces new developments in single-electron logic technology and review a few clever applications made possible when single-electron transistors are combined with CMOS.
Christoph Wasshuber
 DAC1
1997 SIMON-A simulator for single-electron tunnel devices and circuits
abstract
SIMON is a single electron tunnel device and circuit simulator that is based on a Monte Carlo method. It allows transient and stationary simulation of arbitrary circuits consisting of tunnel junctions, capacitors, and voltage sources of three kinds: constant, piecewise linearly time dependent, and voltage controlled. Cotunneling can be simulated either with a plain Monte Carlo method or with a combination of the Monte Carlo and master equation approach. A graphic user interface allows the quick and easy design of circuits with single-electron tunnel devices. Furthermore, as an example of the usage of SIMON, we discuss the essential problem of random background charge and present possible solutions.
Christoph Wasshuber, Hans Kosina, Siegfried Selberherr
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.1