Carbon nanotube (CNT) exhibits outstanding thermal properties and electrical conductivity, and is one of the most promising nano-materials. Several research groups have attempted to achieve digital data transfer in potential nanoscale wireless terminals using nanomaterials. Although conceptual investigations have been reported, the fundamental capability of the transfer particularly in the presence of noise has not yet been discussed. Here, we experimentally demonstrate digital data transfer with a nanoscale receiver that detects the signal using a vibrational CNT nano-antenna. A digital image is transferred, even in the presence of noise; with the introduction of an error-correcting code and a novel digital signal processing technique suitable for nanomechanical systems, the nanoscale receiver is demonstrated to be capable of digital transfer. This small but robust nanomechanical receiver will contribute to the forthcoming data-oriented age of Internet of Things and artificial intelligence-based systems.

Carbon nanotubes (CNTs) offer unique properties such as the highest current density, ballistic transport, ultrahigh thermal conductivity, and extremely high mechanical strength. Because of these remarkable properties, they have been expected for use as wiring materials and as alternate channel materials for extending complementary metal-oxide-semiconductor (CMOS) performance in future very large scale integration (VLSI) technologies. In this paper, we report the present status of CNT growth technologies and the applications for via interconnects (vertical wiring) and field-effect transistors (FETs). We fabricated CNT via and evaluated its robustness over a high-density current. In our technology, multiwalled carbon nanotubes (MWNTs) were successfully grown at temperatures as low as 365°C using Co catalyst nanoparticles, which were formed and deposited by a custom-designed particle generation and deposition system. The density of MWNTs grown at 450°C reaches more than 1×1012/cm2. MWNTs were grown in via holes with a diameter as small as 40 nm. The resistance of CNT vias with a diameter of 160 nm was found to be of the same order as that of tungsten plugs. The CNT via was able to sustain a current density as high as 5.0×106A/cm2at 105°C for 100 h without any deterioration in its properties. We propose a Si-process compatible technique to control carrier polarity of CNFETs by utilizing fixed charges introduced by the gate oxide. High-performancep- andn-type CNFETs and CMOS inverters with stability in air have been realized.