VLDB 2026 Research / reviewers in the wild / expert
Qingyuan Chang
dblp:403/3255
· DBLP profile ↗
3ranked-venue papers
1as first author
3since 2021 · last 2025
0009-0002-9198-8212ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 3 · 1 first-author · 3 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
3 papers |
Integrated circuit design · 94% Hardware reliability and fault tolerance · 6% |
Topics — the 4 heaviest of 7, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
power semiconductor devices |
1.6 | 2 | 2025 | Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT · Sci. China Inf. Sci. 2025 High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor |
0.9 | 1 | 2025 | High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts · Sci. China Inf. Sci. 2025 |
Integrated circuit design
semiconductor devices |
0.9 | 1 | 2025 | High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts · Sci. China Inf. Sci. 2025 |
Integrated circuit design › semiconductor devices › diode
schottky barrier diodes |
0.8 | 1 | 2024 | High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation · Sci. China Inf. Sci. 2024 |
Methods — techniques the papers use, named apart from their topics
gate leakage analysis · 0.9electrical characterization · 0.9ion implantation · 0.8
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2025 | Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT
Mao Jia, Bin Hou, Ling Yang 0003, Hao Lu 0012, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 10 |
| 2025 | High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts
Jiejie Zhu, Dayan Yuan, Lingjie Qin, Mingchen Zhang, Qingyuan Chang, Chupeng Yi |
Sci. China Inf. Sci. | 9 |
| 2024 | High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation
Qingyuan Chang, Bin Hou, Ling Yang 0003, Hao Lu 0012, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Youjun Zhu, Xiaohua Ma 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 1 |