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Yitao Feng

dblp:403/7680 · DBLP profile ↗
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2ranked-venue papers
2as first author
2since 2021 · last 2026
0009-0007-0008-5170ORCID · reported

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 2 · 2 first-author · 2 since 2021

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
2 papers
Integrated circuit design · 100%

Topics — the 3 heaviest of 4, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
power semiconductor devices
1.922026
2.5 kV/674 MW/cm2 or 100 A/2 kV β-Ga2O3 heterojunction diodes with large surge current and small recovery time · Sci. China Inf. Sci. 2026
1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations · Sci. China Inf. Sci. 2025
Integrated circuit design › semiconductor devices › diode
schottky barrier diodes
0.912025
1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations · Sci. China Inf. Sci. 2025
Integrated circuit design › emerging device technologies
gallium oxide devices
0.312025
1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations · Sci. China Inf. Sci. 2025
YearPublicationVenuePosition
2026 2.5 kV/674 MW/cm2 or 100 A/2 kV β-Ga2O3 heterojunction diodes with large surge current and small recovery time
Yitao Feng, Guotao Tian, Yue Hao 0001, Jincheng Zhang 0001
Sci. China Inf. Sci.1
2025 1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations
Yitao Feng, Sami Alghamdi, Guotao Tian, Saud Wasly, Yue Hao 0001, Jincheng Zhang 0001
Sci. China Inf. Sci.1