Demonstration venue · read-only. Every page can be browsed; the buttons that would change it are switched off. Create an account to run TaxoReview on your own data. A simulation from public publication records: the people listed were not invited and did not agree to review.
? Tutorial for this page

Zhihang Qian

dblp:403/7807 · DBLP profile ↗
← Back
4ranked-venue papers
1as first author
4since 2021 · last 2026
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 2 · 1 first-author · 2 since 2021Applied, interdisciplinary, general and emerging computing · 2 · 2 since 2021

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
2 papers
Memory systems · 63% Hardware accelerators and domain-specific architectures · 17% Integrated circuit design · 15%

Topics — the 7 heaviest of 9, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Memory systems
processing-in-memory
1.012026
An area/energy-efficient RRAM computing-in-memory macro with fully-charge-domain multi-bit computation · Sci. China Inf. Sci. 2026
Memory systems › processing-in-memory
ReRAM-based processing-in-memory
1.012026
An area/energy-efficient RRAM computing-in-memory macro with fully-charge-domain multi-bit computation · Sci. China Inf. Sci. 2026
Memory systems
in-memory computing
0.912025
A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics · Sci. China Inf. Sci. 2025
Integrated circuit design › 3d integration
monolithic 3d integration
0.912025
A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics · Sci. China Inf. Sci. 2025
Memory systems
non-volatile memory
0.312025
A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics · Sci. China Inf. Sci. 2025
Memory systems › non-volatile memory
resistive memory
0.312025
A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics · Sci. China Inf. Sci. 2025
Memory systems › random-access memory
SRAM
0.312025
A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics · Sci. China Inf. Sci. 2025

Methods — techniques the papers use, named apart from their topics

multi-bit computation · 1.0IGZO-RRAM-SRAM integration · 0.9
YearPublicationVenuePosition
2026 An area/energy-efficient RRAM computing-in-memory macro with fully-charge-domain multi-bit computation
Shengzhe Yan, Zhuoyu Dai, Zeyu Guo 0002, Zhaori Cong, Zhihang Qian, Xiangqu Fu, Chunmeng Dou, Dashan Shang, Jinshan Yue
Sci. China Inf. Sci.7
2025 A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics
Shengzhe Yan, Zhaori Cong, Zhuoyu Dai, Zeyu Guo 0002, Zhihang Qian, Xufan Li, Chuanke Chen, Nianduan Lu, Chunmeng Dou, Guanhua Yang, Xiaoxin Xu, Di Geng, Jinshan Yue, Ling Li 0013, Ming Liu 0022
Sci. China Inf. Sci.6
2025 An RRAM-Based Computing-in-Memory Macro With Low-Power Readout/Hold Circuits and Activation Differential Strategy for AdderNet
abstract
AdderNet is an innovative neural network (NN) structure that substitutes multiplications with additions in convolutional operations, while computing-in-memory (CIM) is an efficient architecture that tackles the memory bottleneck for von Neumann architectures. Previous work has explored the SRAM-based CIM AdderNet circuits and demonstrates high energy efficiency. However, it still suffers low storage density, repetitive readout, and redundant comparisons. In this brief, an RRAM-based CIM macro is proposed for efficient AdderNet with the following innovations. First, RRAM cells are adopted to replace SRAM for high-density weight storage. A low-power readout and hold circuit is proposed to save redundant read power of weight data held for multiple cycles. Second, an 8-bit comparator with an early-stop strategy is proposed to compare 8-bit activations and weights in one cycle. Third, an activation (ACT) differential strategy is proposed to reduce redundant comparisons. The proposed 28-nm RRAM CIM macro achieves 12.8-TOPS/mm2peak area efficiency and 126-TOPS/W peak energy efficiency, which is$3.0\times $and$1.2\times $compared with the state-of-the-art AdderNet CIM macro.
Zhihang Qian, Shengzhe Yan, Zhuoyu Dai, Zeyu Guo 0002, Zhaori Cong, Yifan He 0003, Chunmeng Dou, Feng Zhang 0014, Jinshan Yue, Yongpan Liu
IEEE Trans. Very Large Scale Integr. Syst.1
2025 A High-Density Energy-Efficient CNM Macro Using Hybrid RRAM and SRAM for Memory-Bound Applications
abstract
The big data era has facilitated various memory-centric algorithms, such as the Transformer decoder, neural network, stochastic computing (SC), and genetic sequence matching, which impose high demands on memory capacity, bandwidth, and access power consumption. The emerging nonvolatile memory devices and compute-near-memory (CNM) architecture offer a promising solution for memory-bound tasks. This work proposes a hybrid resistive random access memory (RRAM) and static random access memory (SRAM) CNM architecture. The main contributions include: 1) proposing an energy-efficient and high-density CNM architecture based on the hybrid integration of RRAM and SRAM arrays; 2) designing low-power CNM circuits using the logic gates and dynamic-logic adder with configurable datapath; and 3) proposing a broadcast mechanism with output-stationary workflow to reduce memory access. The proposed RRAM-SRAM CNM architecture and dataflow tailored for four distinct applications are evaluated at a 28-nm technology, achieving 4.62-TOPS$/$W energy efficiency and 1.20-Mb$/$mm2memory density, which shows$11.35\times $–$25.81\times $and$1.44\times $–$4.92\times $improvement compared to previous works, respectively.
Shengzhe Yan, Xiangqu Fu, Zhihang Qian, Zhi Li 0062, Zeyu Guo 0002, Zhuoyu Dai, Zhaori Cong, Chunmeng Dou, Feng Zhang 0014, Jinshan Yue, Dashan Shang
IEEE Trans. Very Large Scale Integr. Syst.4