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Stan W. Tarasewicz

dblp:41/2554 · DBLP profile ↗
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1ranked-venue papers
0as first author
0since 2021 · last 1991
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 100%

Topics — the 3 heaviest of 3, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › analog and mixed-signal circuits
device modeling		 0.011991
MISNAN-a physically based continuous MOSFET model for CAD applications · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1991
Integrated circuit design › analog and mixed-signal circuits › device modeling
MOSFET model		 0.011991
MISNAN-a physically based continuous MOSFET model for CAD applications · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1991
Integrated circuit design › analog and mixed-signal circuits › device modeling
surface potential model		 0.011991
MISNAN-a physically based continuous MOSFET model for CAD applications · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1991

Methods — techniques the papers use, named apart from their topics

quasi-static charge modeling · 0.0iterative surface potential solution · 0.0
YearPublicationVenuePosition
1991 MISNAN-a physically based continuous MOSFET model for CAD applications
abstract
A circuit-level MOSFET model is presented which is based on the representation of current transport in a sheet channel in terms of the surface potential conditions at the source and drain boundaries. It is established that the surface potential solutions can be obtained by iterative means with negligible computing time penalty. The model is scalable and results in continuous device characteristics under all operating conditions. High accuracy of the model is demonstrated over a wide range of device geometries and terminal voltages. The features of scalability, continuity, and high accuracy are attributed to physical representation of all important effects occurring in MOSFETs. Details on model implementation are provided and include modeling of carrier mobility, saturation region approximation, and representation of quasi-static charges in the device.>
A. R. Boothroyd, Stan W. Tarasewicz, Cezary Slaby
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.2