We propose an electrostatics-based placement algorithm for large-scale mixed-size circuits (ePlace-MS). ePlace-MS is generalized, flat, analytic and nonlinear. The density modeling method eDensity is extended to handle the mixed-size placement. We conduct detailed analysis on the correctness of the gradient formulation and the numerical solution, as well as the rationale of dc removal and the advantages over prior density functions. Nesterov's method is used as the nonlinear solver, which shows high yet stable performance over mixed-size circuits. The steplength is set as the inverse of Lipschitz constant of the gradient function, while we develop a backtracking method to prevent overestimation. An approximated nonlinear preconditioner is developed to minimize the topological and physical differences between large macros and standard cells. Besides, we devise a simulated annealer to legalize the layout of macros and use a second-phase global placement to reoptimize the standard cell layout. All the above innovations are integrated into our mixed-size placement prototype ePlace-MS, which outperforms all the related works in literature with better quality and efficiency. Compared to the leading-edge mixed-size placer NTUplace3, ePlace-MS produces up to 22.98% and on average 8.22% shorter wirelength over all the 16 modern mixed-size benchmark circuits with the same runtime.

In this article, we present a method to analyze the total leakage current of a circuit under process variations, considering interdie and intradie variations as well as the effect of the spatial correlations of intradie variations. The approach considers both the subthreshold and gate tunneling leakage power, as well as their interactions. With process variations, each leakage component is approximated by a lognormal distribution, and the total chip leakage is computed as a sum of the correlated lognormals. Since the lognormals to be summed are large in number and have complicated correlation structures due to both spatial correlations and the correlation among different leakage mechanisms, we propose an efficient method to reduce the number of correlated lognormals for summation to a manageable quantity. We do so by identifying dominant states of leakage currents and taking advantage of the spatial correlation model and input states at the gates. An improved approach utilizing the principal components computed from spatially correlated process parameters is also proposed to further improve runtime efficiency. We show that the proposed methods are effective in predicting the probability distribution of total chip leakage, and that ignoring spatial correlations can underestimate the standard deviation of full-chip leakage power.

In this paper, we present a method for analyzing the leakage current, and hence the leakage power, of a circuit under process parameter variations that can include spatial correlations due to intra-chip variation. A lognormal distribution is used to approximate the leakage current of each gate and the total chip leakage is determined by summing up the lognormals. In this work, Both subthreshold leakage and gate tunneling leakage are considered. The proposed method is shown to be effective in predicting the CDF/PDF of the total chip leakage. The average errors for mean and sigma values are -1.3% and -4.1%

Variability of process parameters makes prediction of digital circuit timing characteristics an important and challenging problem in modern chip design. Recently, statistical static timing analysis (statistical STA) has been proposed as a solution. Unfortunately, the existing approaches either do not consider explicit gate delay dependence on process parameters [3] - [6] or restrict analysis to linear Gaussian parameters only [1, [2]. Here we extend the capabilities of parameterized block-based statistical STA [1] to handle nonlinear function of delays and non-Gaussian parameters, while retaining maximum efficiency of processing linear Gaussian parameters. Our novel technique improves accuracy in predicting circuit timing characteristics and retains such benefits of parameterized block-based statistical STA as an incremental mode of operation, computation of criticality probabilities and sensitivities to process parameter variations. We implemented our technique in an industrial statistical timing analysis tool. Our experiments with large digital blocks showed both efficiency and accuracy of the proposed technique.

Process variations are of increasing concern in today's technologies, and they can significantly affect circuit performance. An efficient statistical timing analysis algorithm that predicts the probability distribution of the circuit delay considering both inter-die and intra-die variations, while accounting for the effects of spatial correlations of intra-die parameter variations, is presented. The procedure uses a first-order Taylor series expansion to approximate the gate and interconnect delays. Next, principal component analysis (PCA) techniques are employed to transform the set of correlated parameters into an uncorrelated set. The statistical timing computation is then easily performed with a program evaluation and review technique (PERT)-like circuit graph traversal. The run time of this algorithm is linear in the number of gates and interconnects, as well as the number of varying parameters and grid partitions that are used to model spatial correlations. The accuracy of the method is verified with Monte Carlo (MC) simulation. On average, for the 100 nm technology, the errors of mean and standard deviation (SD) values computed by the proposed method are 1.06% and -4.34%, respectively, and the errors of predicting the 99% and 1% confidence point are -2.46% and -0.99%, respectively. A testcase with about 17 800 gates was solved in about 500 s, with high accuracy as compared to an MC simulation that required more than 15 h.