VLDB 2026 Research / reviewers in the wild / expert
Jiangbin Wan
dblp:432/4327
· DBLP profile ↗
1ranked-venue papers
1as first author
1since 2021 · last 2026
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 1 · 1 first-author · 1 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 3 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
power semiconductor devices |
1.0 | 1 | 2026 | Over 3 GW/cm2 low leakage vertical β-Ga2O3 Schottky rectifier featuring self-aligned multi-zone junction termination extension · Sci. China Inf. Sci. 2026 |
Integrated circuit design › emerging device technologies
gallium oxide devices |
0.3 | 1 | 2026 | Over 3 GW/cm2 low leakage vertical β-Ga2O3 Schottky rectifier featuring self-aligned multi-zone junction termination extension · Sci. China Inf. Sci. 2026 |
Integrated circuit design › semiconductor devices
wide bandgap semiconductor devices |
0.3 | 1 | 2026 | Over 3 GW/cm2 low leakage vertical β-Ga2O3 Schottky rectifier featuring self-aligned multi-zone junction termination extension · Sci. China Inf. Sci. 2026 |
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2026 | Over 3 GW/cm2 low leakage vertical β-Ga2O3 Schottky rectifier featuring self-aligned multi-zone junction termination extension
Jiangbin Wan, Hengyu Wang, Tiancheng Tao, Haoyuan Cheng, Kuang Sheng |
Sci. China Inf. Sci. | 1 |