Metal-Over-Gate MOSFETs are analyzed for their high frequency properties. The distributed nature of the gate and metal over-gate are examined and an analysis of the small-signal parameters is presented. Simplified small-signal y-parameters are derived from the full analysis, and used to construct an equivalent small-signal lumped circuit model. Metal-Over-Gate MOSFETs are shown to have higher G/sub max/ compared to traditional MOSFETs.

In this paper, we present a small-signal model for an integrated MOS transistor which takes into account the distributed nature of the gate structure. The y parameters are derived, as well as an equation for an equivalent current noise source at the output. The equivalent current noise source takes into account the thermal noise generated by the resistive gate. The modeling equations are of relatively simple form, allowing for easy implementation into a circuit simulation CAD tool. The model is particularly useful in the design of RF integrated circuits. The proposed model is verified using results obtained from HSPICE.

In this paper, we present simulation results of magnetic sensitivity for bipolar magnetotransistors using an equivalent circuit modeling approach. The magnetotransistors is suitably partitioned into inactive- and active-magnetic device regions where the latter is modeled using an appropriate circuit topology, based on magnetic field dependent resistors and voltage controlled current sources that account for the interaction of the magnetic field on the injected currents. The resulting equivalent circuit is generated and implemented into HSPICE and simulation results, and subsequent optimization, of magnetic sensitivity are obtained for various geometrical and technological parameters. The circuit approach presented here facilitates computer aided design (and optimization) of both sensor, the co-integrated circuitry, and their interactions, since it can all be done in the same environment.>