Demo Data from VLDB 2026 / reviewers in the wild / expert
Umesh K. Mishra
dblp:53/3652
· DBLP profile ↗
4ranked-venue papers
3as first author
1since 2021 · last 2023
0000-0001-8084-9247ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 4 · 3 first-author · 1 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
4 papers |
Integrated circuit design · 99% Hardware reliability and fault tolerance · 1% | |
| Computer networks
1 paper |
Physical-layer communications · 100% |
Topics — the 11 heaviest of 11, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices
wide bandgap semiconductor devices |
0.8 | 3 | 2023 | Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply · Proc. IEEE 2023 GaN-Based RF Power Devices and Amplifiers · Proc. IEEE 2008 AlGaN/GaN HEMTs-an overview of device operation and applications · Proc. IEEE 2002 |
Integrated circuit design
power semiconductor devices |
0.7 | 1 | 2023 | Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply · Proc. IEEE 2023 |
Integrated circuit design › semiconductor devices › GaN HEMT
gallium nitride device |
0.2 | 1 | 2023 | Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply · Proc. IEEE 2023 |
Integrated circuit design › semiconductor devices
semiconductor device technology |
0.2 | 1 | 2023 | Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply · Proc. IEEE 2023 |
Integrated circuit design › radio-frequency circuit design
monolithic microwave integrated circuit |
0.1 | 1 | 2008 | GaN-Based RF Power Devices and Amplifiers · Proc. IEEE 2008 |
Integrated circuit design › semiconductor devices › GaN HEMT
AlGaN/GaN HEMT |
0.0 | 1 | 2002 | AlGaN/GaN HEMTs-an overview of device operation and applications · Proc. IEEE 2002 |
Hardware reliability and fault tolerance
device reliability |
0.0 | 1 | 2008 | GaN-Based RF Power Devices and Amplifiers · Proc. IEEE 2008 |
Integrated circuit design
power electronics |
0.0 | 1 | 2002 | AlGaN/GaN HEMTs-an overview of device operation and applications · Proc. IEEE 2002 |
Integrated circuit design › semiconductor devices
field-effect transistor |
0.0 | 1 | 1992 | Ultra-high speed modulation-doped field-effect transistors: a tutorial review · Proc. IEEE 1992 |
Physical-layer communications › RF circuit design
traveling wave tube amplifier |
0.0 | 1 | 1992 | Ultra-high speed modulation-doped field-effect transistors: a tutorial review · Proc. IEEE 1992 |
Integrated circuit design › digital circuit design
high-speed digital circuits |
0.0 | 1 | 1992 | Ultra-high speed modulation-doped field-effect transistors: a tutorial review · Proc. IEEE 1992 |
Methods — techniques the papers use, named apart from their topics
material processing · 0.1epitaxial growth · 0.1modulation doping · 0.0device scaling · 0.0
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2023 | Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power SupplyabstractThis article was jointly produced by IEEE Spectrum and PROCEEDINGS OF THE IEEE with similar versions published in both publications. Umesh K. Mishra |
Proc. IEEE | 1 |
| 2008 | GaN-Based RF Power Devices and AmplifiersabstractThe rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high output power density, high operation voltage and high input impedance. GaN-based RF power devices have made substantial progresses in the last decade. This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, to achieve the state-of-the-art microwave and millimeter-wave performance. The reliability and manufacturing challenges are also discussed. Umesh K. Mishra, Likun Shen, Thomas E. Kazior, YiFeng Wu |
Proc. IEEE | 1 |
| 2002 | AlGaN/GaN HEMTs-an overview of device operation and applicationsabstractWide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems. Umesh K. Mishra, Primit Parikh, YiFeng Wu |
Proc. IEEE | 1 |
| 1992 | Ultra-high speed modulation-doped field-effect transistors: a tutorial reviewabstractA tutorial review on the modulation-doped field-effect transistor (MODFET) and its application to ultra-low-noise, medium-power, and ultra-wide-band traveling-wave amplifiers as well as ultra-high-speed digital logic circuits is presented. It is believed that with further advances in material growth and device scaling significant improvements in cutoff frequencies, switching speed, noise, and power will be achieved in the near future.> Loi D. Nguyen, Lawrence E. Larson, Umesh K. Mishra |
Proc. IEEE | 3 |