Demo Data from VLDB 2026 / reviewers in the wild / expert
Steven Bova
dblp:62/1174
· DBLP profile ↗
1ranked-venue papers
1as first author
0since 2021 · last 1995
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Systems, architecture and hardware · 1 · 1 first-author
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Interdisciplinary, comprehensive, and emerging computing
1 paper |
Computational science and engineering · 100% | |
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 3 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Computational science and engineering
finite element analysis |
0.0 | 1 | 1995 | A Taylor-Galerkin finite element method for the hydrodynamic semiconductor equations · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1995 |
Computational science and engineering
numerical simulation |
0.0 | 1 | 1995 | A Taylor-Galerkin finite element method for the hydrodynamic semiconductor equations · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1995 |
Integrated circuit design
semiconductor device modeling |
0.0 | 1 | 1995 | A Taylor-Galerkin finite element method for the hydrodynamic semiconductor equations · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1995 |
Methods — techniques the papers use, named apart from their topics
taylor-galerkin finite element method · 0.0characteristic projections · 0.0adaptive time iteration · 0.0
| Year | Publication | Venue | Position |
|---|---|---|---|
| 1995 | A Taylor-Galerkin finite element method for the hydrodynamic semiconductor equationsabstractA new Taylor-Galerkin finite element method and adaptive, time-iterative scheme are developed for simulating single-carrier submicron-scale semiconductor device transport with the hydrodynamic model under the assumptions of parabolic energy bands. Boundary conditions are applied using characteristic projections. Numerical studies are conducted to investigate the sensitivity of the given model to some of the parameters contained in typical heat flux and relaxation time models for a one-dimensional, representative test problem. Steven Bova, Graham F. Carey |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. | 1 |