Demonstration venue · read-only. Every page can be browsed; the buttons that would change it are switched off. Create an account to run TaxoReview on your own data. A simulation from public publication records: the people listed were not invited and did not agree to review.
? Tutorial for this page
Demo Data from VLDB 2026 / reviewers in the wild / expert

A. M. Mazzone

dblp:66/313 · DBLP profile ↗
← Back
3ranked-venue papers
3as first author
0since 2021 · last 1985
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 3 · 3 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
3 papers
Integrated circuit design · 91% Performance modeling and evaluation · 9%

Topics — the 3 heaviest of 3, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › semiconductor process modeling
ion implantation		 0.031985
Monte Carlo Methods in Defects Migration -- Spontaneous Annealing of Damage Induced by Ion Implantation · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985
Three-Dimensional Monte Carlo Simulations--Part II: Recoil Phenomena · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985
Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron Device · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1984
Integrated circuit design
semiconductor process modeling		 0.031985
Monte Carlo Methods in Defects Migration -- Spontaneous Annealing of Damage Induced by Ion Implantation · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985
Three-Dimensional Monte Carlo Simulations--Part II: Recoil Phenomena · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985
Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron Device · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1984
Performance modeling and evaluation › simulation
monte carlo simulation		 0.021985
Three-Dimensional Monte Carlo Simulations--Part II: Recoil Phenomena · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985
Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron Device · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1984

Methods — techniques the papers use, named apart from their topics

monte carlo simulation · 0.0metropolis algorithm · 0.0
YearPublicationVenuePosition
1985 Three-Dimensional Monte Carlo Simulations--Part II: Recoil Phenomena
abstract
A Monte Carlo method has been applied to recoil calculation. The spatial distribution of disorder has been analyzed in connection with parameters like ion mass, energy, and dose. Also implants in multilayer targets and the characteristic features of oxygen recoiling from a SiO /sub 2/ coating into Si underneath have been analyzed.
A. M. Mazzone
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.1
1985 Monte Carlo Methods in Defects Migration -- Spontaneous Annealing of Damage Induced by Ion Implantation
abstract
This paper presents a simulation of the spontaneous annealing of damage generated during ion implantation and describes events such as clustering of defects of the same type and annihilation of defects of opposite type. The approach, which follows the line of the work by Metropolis et al., consists of generating a representative ensemble of points in the space of the configurational energy through random walks of the migrating species.
A. M. Mazzone
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.1
1984 Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron Device
abstract
Monte Carlo methods are used to simulate implants. The results fall into two different groups. On one side, size-dependent effects due to the presence of the mask are analyzed and discussed. On the other side, physical mechanisms dependent on dose and energy, like channeling and transition crystal-amorphous, are briefly reviewed.
A. M. Mazzone, G. Rocca
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.1